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IRF5N5210SCX

Infineon Technologies

IRF5N5210SCX by Infineon Technologies

IRF5N5210SCX by Infineon is a P-CHANNEL MOSFET with 31A max drain current and 125W power dissipation. Ideal for enhancement mode operation, it's surface-mountable and operates up to 150°C. Suitable for various applications requiring high-power switching in compact designs.

Median Price

$199.080

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

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$199.080

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500

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Vyrian

USA . 368 parts In-Stock

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368

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NexGen Digital

USA . 200 parts In-Stock

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200

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Digiode

USA . 7 parts In-Stock

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Modulus Dynamics

Lithuania . 25,103 parts In-Stock

1+ parts

$1.574

100+ parts

$1.511

1k+ parts

$1.448

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25,103

$1.574

$1.511

$1.448

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Ampacity Inc.

Singapore . 330 parts In-Stock

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$9.050

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330

$9.050

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AZTECH Wire

Italy . 569 parts In-Stock

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$11.805

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569

$11.805

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Aranea Global

USA . 2,000 parts In-Stock

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$195.098

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$187.294

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2,000

$195.098

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$187.294

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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Corphita

USA . 862 parts In-Stock

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862

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Overview

Unleash the power of efficient electronics with the IRF5N5210SCX by Infineon Technologies. Designed with superior quality and reliability, this P-CHANNEL field effect transistor offers enhanced performance for a variety of applications. From power supplies to motor control, this single configuration transistor delivers up to 31A of maximum drain current and 125W of power dissipation. Experience the benefits of Infineon's cutting-edge technology and elevate your projects to new levels of efficiency and effectiveness.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-Channel transistors have lower on-state resistance and better current control compared to N-channel transistors, making them suitable for high-side switching applications.

Configuration: SINGLE

Single configuration transistors are easy to control and integrate into circuit designs, providing simplicity and efficiency.

Surface Mount: YES

Surface mount technology allows for a smaller footprint and higher component density on PCBs, making the product suitable for compact electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low on-state resistance, enabling efficient switching operations in various applications.

Maximum Drain Current (Abs) (ID): 31 A

With a high maximum drain current rating, this transistor can handle heavy loads and high-power applications without performance degradation.

Maximum Power Dissipation (Abs): 125 W

The high maximum power dissipation rating ensures reliable performance and thermal management under high load conditions and prolonged operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers low gate drive power, high input impedance, and fast switching speeds, making the transistor suitable for various digital and analog applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and challenging environments, ensuring robust performance in extreme conditions.

Technical Specifications

Other Function Transistors IRF5N5210SCX attributes and parameters. Explore more Other Function Transistors devices from Infineon Technologies

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

31 A

Maximum Drain Current (ID):

31 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

IRF5N5210SCX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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