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2N4338-E3

Vishay Intertechnology

2N4338-E3 by Vishay Intertechnology

Vishay Intertechnology's 2N4338-E3 is an N-CHANNEL transistor with a max power dissipation of 0.3W and max operating temp of 200°C. It utilizes JUNCTION technology, has matte tin terminal finish, and can withstand peak reflow temp of 260°C. Ideal for various electronic applications requiring high temperature resistance.

Median Price

$5.808

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 18 parts In-Stock

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$5.808

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VNN

France . 3,568 parts In-Stock

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Vyrian

USA . 2,766 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 443 parts In-Stock

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$5.808

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$5.692

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Netroflash

USA . 50 parts In-Stock

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$5.808

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AZTECH Wire

Italy . 274 parts In-Stock

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$7.837

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Ampacity Inc.

Singapore . 1,333 parts In-Stock

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$40.050

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Argo Parts USA

USA . 5,394 parts In-Stock

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Kepictronics

USA . 329 parts In-Stock

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RC Electronics

USA . 200 parts In-Stock

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$6.100

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$5.750

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$5.630

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Overview

Discover the power of the 2N4338-E3 by Vishay Intertechnology, a high-quality N-channel junction transistor that offers reliability and performance. With a maximum power dissipation of 0.3W and a maximum operating temperature of 200°C, this transistor is ideal for a variety of applications. Whether you need to amplify signals or control electrical currents, the 2N4338-E3 provides the value, benefits, and advantages that customers are looking for. Trust in Vishay Intertechnology for top-notch components that deliver every time.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are known for their high efficiency and low on-state resistance, making them suitable for high power applications.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle higher power levels without overheating, ensuring reliable performance.

Field Effect Transistor Technology: JUNCTION

Junction field-effect transistors offer high input impedance and low output impedance, making them ideal for high-frequency applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can operate in a wide range of environmental conditions without malfunctioning.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring a reliable electrical connection.

Maximum Time At Peak Reflow Temperature (s): 40

This transistor can withstand peak reflow temperatures for up to 40 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can endure high-temperature soldering processes without damage.

Technical Specifications

Other Function Transistors 2N4338-E3 attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Field Effect Transistor Technology:

JUNCTION

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

200 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

2N4338-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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