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BFR182W-E6327

Infineon Technologies

BFR182W-E6327 by Infineon Technologies

BFR182W-E6327 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 50, and nominal transition frequency of 6000MHz. Ideal for high-frequency amplification in electronic circuits with operating temperatures up to 150°C.

Median Price

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Lifecycle Status

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6

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1k+

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Vyrian

USA . 9,872 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5,842 parts In-Stock

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Q Components

USA . 3,600 parts In-Stock

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3,600

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VNN

France . 1,632 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Digiode

USA . 678 parts In-Stock

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Modulus Dynamics

Lithuania . 8,154 parts In-Stock

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$0.882

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$0.847

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$0.811

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AZTECH Wire

Italy . 234 parts In-Stock

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$10.726

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Ampacity Inc.

Singapore . 1,205 parts In-Stock

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$37.050

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RC Electronics

USA . 34,200 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,500 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 3,056 parts In-Stock

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Aranea Global

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Kepictronics

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Argo Parts USA

USA . 1,391 parts In-Stock

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Corphita

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Corohmni

South Africa . 409 parts In-Stock

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Perfect Parts

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Microchip USA

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Overview

Discover the unparalleled performance and reliability of the BFR182W-E6327 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies ensures top-notch quality and innovation in their products. This NPN transistor boasts a range of applications in various electronic circuits, offering customers exceptional value and benefits. Experience seamless integration and enhanced functionality with the BFR182W-E6327, making it the ideal choice for your next project.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing high efficiency and low noise characteristics.

Configuration: SINGLE

Single configuration transistors simplify circuit design and are easier to manage compared to multiple configurations.

Surface Mount: YES

Surface mount capability enables easy and secure installation onto circuit boards, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle moderate power loads without overheating.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures reliable and stable amplification of the input signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to function reliably in various environments.

Maximum Collector Current (IC): 0.035 A

The maximum collector current of 0.035 A indicates the capability of handling moderate current loads.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures secure and stable soldering during the manufacturing process.

Nominal Transition Frequency (fT): 6000 MHz

With a high nominal transition frequency of 6000 MHz, this transistor is suitable for high-frequency applications such as RF amplification.

Technical Specifications

Other Function Transistors BFR182W-E6327 attributes and parameters. Explore more Other Function Transistors devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

50

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

BFR182W-E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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