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BFR106/C,215

NXP Semiconductors

BFR106/C,215 by NXP Semiconductors

BFR106/C,215 by NXP Semiconductors is an NPN single transistor ideal for RF applications. It features a max power dissipation of 0.5W, a min DC current gain (hFE) of 25, and operates up to 175 °C. This versatile surface-mount device excels in communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,676 parts In-Stock

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4,676

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Digiode

USA . 2,965 parts In-Stock

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2,965

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Anansix

USA . 614 parts In-Stock

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614

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Native Components

USA . 589 parts In-Stock

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$1.063

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589

$1.063

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Northwest PG Solutions

USA . 1,541 parts In-Stock

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$1.169

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1,541

$1.169

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One Stop Electronics

USA . 1,499 parts In-Stock

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$12.050

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1,499

$12.050

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Corphita

USA . 2,344 parts In-Stock

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2,344

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UNI Independent Distributors

Spain . 605 parts In-Stock

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605

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Overview

Elevate your designs with the BFR106/C,215 from NXP Semiconductors, a leader in semiconductor innovation. This high-quality NPN transistor ensures reliable performance in diverse applications, from RF amplifiers to signal processing. Experience enhanced efficiency and robust thermal stability, all in a compact surface-mount package. Trust NXP's commitment to excellence for seamless integration and superior results in your projects!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used for their efficiency in switching applications, making this product a reliable choice for various electronic circuits.

Configuration: SINGLE

A single configuration allows for more compact circuit designs, providing flexibility in layout and overall performance in smaller applications.

Surface Mount: YES

Surface mount technology ensures a smaller footprint on PCBs, optimizing space and improving production efficiency in modern electronics.

Maximum Power Dissipation (Abs): 0.5 W

With 0.5 W power dissipation capability, this transistor can handle moderate loads effectively, making it suitable for various applications without overheating.

Minimum DC Current Gain (hFE): 25

A minimum hFE of 25 guarantees decent amplification, ensuring that it can effectively drive larger loads or other stages in a circuit.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature of 175 °C allows this transistor to function reliably in demanding environments without risk of failure.

Maximum Collector Current (IC): 0.1 A

The capability of handling up to 0.1 A of collector current makes this transistor suitable for a variety of low to medium power applications.

Technical Specifications

Other Function Transistors BFR106/C,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFR106/C,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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