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SI3443DVTRPBF

International Rectifier

SI3443DVTRPBF by International Rectifier

SI3443DVTRPBF by International Rectifier is a P-CHANNEL FET with 4.4A max drain current and 2W power dissipation. Ideal for applications requiring single configuration, such as power management systems operating at up to 150°C.

Median Price

$0.179

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Nova Conductors

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Overview

Enhance your electronic projects with the high-quality SI3443DVTRPBF by International Rectifier. As a leading manufacturer in the industry, International Rectifier ensures top-notch performance and reliability in their products. This P-CHANNEL transistor offers versatile applications in various circuits, providing customers with exceptional value and benefits. Experience seamless operation and enhanced efficiency with the SI3443DVTRPBF, making it a must-have component for all your electronics needs.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors offer lower on-state resistance and better current control, making them suitable for high power applications.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easy integration into existing systems.

Surface Mount: YES

Surface mount technology enables compact and lightweight designs, ideal for space-constrained applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors provide better control over the switching behavior, improving overall system efficiency.

Maximum Drain Current (Abs) (ID): 4.4 A

With a high maximum drain current, this transistor can handle substantial power loads without overheating.

Maximum Power Dissipation (Abs): 2 W

The low power dissipation rating ensures efficient operation and minimizes heat generation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers reliable performance and high switching speeds for improved system responsiveness.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for operation in challenging environments without compromising performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and ensures a secure electrical connection.

Moisture Sensitivity Level (MSL): 2

MSL 2 rating indicates moderate sensitivity to moisture, making this transistor suitable for a wide range of applications.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds minimizes thermal stress on the component during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without damage.

Technical Specifications

Other Function Transistors SI3443DVTRPBF attributes and parameters. Explore more Other Function Transistors devices from International Rectifier

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4.4 A

Maximum Drain Current (ID):

4.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

2

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SI3443DVTRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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