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SI3445DV-T1

Vishay Intertechnology

SI3445DV-T1 by Vishay Intertechnology

Vishay Intertechnology's SI3445DV-T1 is a P-CHANNEL FET with 5.6A max drain current and 2W max power dissipation in enhancement mode. Ideal for applications requiring high efficiency and compact design, it operates at up to 150°C, making it suitable for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Adafruit Industries

USA . 3,302 parts In-Stock

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Cyclops Electronics Ltd

UK . 15,000 parts In-Stock

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Bristol Electronics

USA . 5,195 parts In-Stock

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Vyrian

USA . 2,958 parts In-Stock

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Odi Ramu Company

Canada . 2,586 parts In-Stock

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Sea View Technologies

USA . 2,436 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,242 parts In-Stock

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Zilex Electronics Inc.

Canada . 160 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Elcom Components

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Component Stockers USA

USA . 8,050 parts In-Stock

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$0.090

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Corohmni

South Africa . 4 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,735 parts In-Stock

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Ampacity Inc.

Singapore . 3,039 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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Lixinc

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Metaverse IC Inc.

Canada . 15,000 parts In-Stock

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Advanced Electronics

New Zealand . 3,302 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Argo Parts USA

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Bastille Electronics

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Overview

Unleash the power of innovation with Vishay Intertechnology's SI3445DV-T1 P-CHANNEL transistor. Designed for efficiency and reliability, this enhancement mode transistor is perfect for a wide range of applications. Whether you're looking to improve performance in your electronics or enhance energy efficiency in your devices, this single configuration transistor delivers maximum power dissipation and high drain current capabilities. Trust Vishay Intertechnology for quality and value, and experience the difference with the SI3445DV-T1.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

This transistor's P-channel type allows for efficient power management in electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and saves on space.

Surface Mount: YES

The surface mount feature enables easy installation onto PCBs, making it suitable for small electronic devices.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation ensures precise control over the transistor's conductivity, ideal for various applications.

Maximum Drain Current (Abs) (ID): 5.6 A

With a high max drain current, this transistor can handle heavy loads without overheating.

Maximum Power Dissipation (Abs): 2 W

The high power dissipation capacity prevents overheating and ensures the transistor's reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The MOS technology provides high efficiency and low power consumption.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this transistor can work in demanding environments without degradation.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish offers good solderability and compatibility with standard soldering processes.

Technical Specifications

Other Function Transistors SI3445DV-T1 attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5.6 A

Maximum Drain Current (ID):

5.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

SI3445DV-T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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