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SI3443DV

Vishay Intertechnology

SI3443DV by Vishay Intertechnology

The Vishay Intertechnology SI3443DV is a P-CHANNEL FET with 4.4A max drain current and 2W max power dissipation. Ideal for applications requiring high efficiency in a compact form factor, such as power management circuits in consumer electronics. Operating from -55°C to 150°C, it offers enhanced performance in surface-mount configurations.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Chip1Stop

Japan . 1 parts In-Stock

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DigiKey

USA . 9,950 parts In-Stock

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Verical

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Rochester

USA . 304 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Digiode

USA . 3,110 parts In-Stock

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R&J Components

USA . 36,080 parts In-Stock

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DigiKey Marketplace

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

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Vyrian

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LIBRA Elektronik GmbH

Germany . 5,734 parts In-Stock

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Sea View Technologies

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ComSIT Distribution GmbH

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Zilex Electronics Inc.

Canada . 2,700 parts In-Stock

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Euro-Tech

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PC Components Company LLC

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Connector Distribution Corp

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Right Parts Inc.

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900

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Prism Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Electronics Depot

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Elcom Components

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Distributors (Availability)

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Corohmni

South Africa . 261 parts In-Stock

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Corphita

USA . 2,314 parts In-Stock

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Argo Parts USA

USA . 3,842 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,042 parts In-Stock

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Component Stockers USA

USA . 15,572 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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CPlus Electronics

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Perfect Parts

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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TANS Electronics

Latvia . 7,958 parts In-Stock

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Kulean Microsystems

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GreenTree Electronics

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SupplyDigital Components

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Glotronic Ltd.

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Problanco Electronics

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Supply Digital

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UHIMA Technologies

Türkiye . 106 parts In-Stock

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Authorized Procurement Solutions

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Speed Components Ltd (Excess)

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iodParts Technologies Inc.

India . 2 parts In-Stock

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Overview

Upgrade your electronics with the Vishay Intertechnology SI3443DV P-Channel Transistor. Manufactured by a trusted brand, this transistor offers high-quality performance and reliability. Ideal for a variety of applications, this enhancement mode transistor is perfect for enhancing the efficiency and functionality of your electronic devices. With a maximum drain current of 4.4 A and maximum power dissipation of 2 W, this transistor provides value and benefits that will take your projects to the next level. Trust Vishay Intertechnology to deliver innovative solutions for all your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low on-state resistance and high current carrying capability, making them suitable for high power applications.

Configuration: SINGLE

SINGLE configuration transistors are easy to integrate into circuits and provide simple control over the flow of current.

Surface Mount: YES

Surface mount transistors offer compact size, easy installation, and better thermal performance compared to through-hole components.

Operating Mode: ENHANCEMENT MODE

ENHANCEMENT MODE transistors allow for better control over the current flow, enabling efficient switching and amplification of signals.

Maximum Drain Current (Abs) (ID): 4.4 A

High maximum drain current rating ensures the transistor can handle high power loads without risk of damage, making it reliable for demanding applications.

Maximum Power Dissipation (Abs): 2 W

High maximum power dissipation ensures the transistor can handle heat dissipation effectively, improving reliability and longevity in operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR technology offers good efficiency, low leakage current, and high speed operation, suitable for various electronic applications.

Maximum Operating Temperature: 150 °C

Wide temperature range of up to 150°C allows the transistor to operate reliably in high-temperature environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C ensures the transistor can function in cold environments without losing performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and conductivity, ensuring secure connections in the circuit.

Technical Specifications

Other Function Transistors SI3443DV attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4.4 A

Maximum Drain Current (ID):

4.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

SI3443DV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5962-01-625-3862, 5962016253862

NIIN

016253862

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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