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SI3443DV-T1-E3

Vishay Intertechnology

SI3443DV-T1-E3 by Vishay Intertechnology

Vishay Intertechnology's SI3443DV-T1-E3 is a P-CHANNEL FET with 3.4A max drain current and 2W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various electronic devices.

Median Price

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Lifecycle Status

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R&J Components

USA . 39,080 parts In-Stock

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Zilex Electronics Inc.

Canada . 6,573 parts In-Stock

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Bristol Electronics

USA . 5,415 parts In-Stock

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Sea View Technologies

USA . 4,070 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,980 parts In-Stock

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PC Components Company LLC

USA . 1,345 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

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Nova Conductors

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Component Stockers USA

USA . 4,395 parts In-Stock

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$0.110

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$0.100

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AZTECH Wire

Italy . 809 parts In-Stock

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Ampacity Inc.

Singapore . 1,450 parts In-Stock

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CPlus Electronics

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Metaverse IC Inc.

Canada . 54,035 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Assy Fe

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Argo Parts USA

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Perfect Parts

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Continental Prestige Electronics

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Aranea Global

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Overview

Discover the superior quality and reliability of the SI3443DV-T1-E3 by Vishay Intertechnology, a leading manufacturer in the industry. Ideal for various applications, this P-CHANNEL transistor offers unmatched performance and efficiency. With its single configuration and enhancement mode operation, this surface mount transistor delivers a maximum drain current of 3.4 A and a power dissipation of 2 W. Trust in Vishay Intertechnology to provide top-of-the-line products that meet your needs and exceed your expectations. Choose the SI3443DV-T1-E3 for unparalleled value and benefits in your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type:

P-CHANNEL - Allows for efficient current regulation in electronic circuits.

Configuration:

SINGLE - Simplifies circuit design and installation process.

Surface Mount:

YES - Enables easy and secure mounting on circuit boards.

Operating Mode:

ENHANCEMENT MODE - Provides enhanced control over the transistor's operation.

Maximum Drain Current (Abs):

3.4 A - Ensures capability to handle high current loads.

Maximum Power Dissipation (Abs):

2 W - Suitable for applications requiring power handling capacity.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Offers high efficiency and reliability in operation.

Maximum Operating Temperature:

150 °C - Ensures stable performance even in high-temperature environments.

Terminal Finish:

MATTE TIN - Provides corrosion resistance for long-term reliability.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures proper soldering during assembly process.

Peak Reflow Temperature °C:

260 - Supports high-temperature soldering for robust connections.

Technical Specifications

Other Function Transistors SI3443DV-T1-E3 attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.4 A

Maximum Drain Current (ID):

3.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SI3443DV-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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