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SI3443DV-T1

Vishay Intertechnology

SI3443DV-T1 by Vishay Intertechnology

Vishay Intertechnology's SI3443DV-T1 is a P-CHANNEL FET with 3.4A max drain current and 2W power dissipation. Ideal for applications requiring high efficiency in a single configuration, such as power management systems. Operating in enhancement mode, it can handle up to 150°C temperature with surface mount capability.

Median Price

$0.250

Lifecycle Status

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In-Stock Inventory

1k+

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NAC Semi

USA . 881 parts In-Stock

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DF Sales Co.

USA . 2,000 parts In-Stock

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DF Sales Co.

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Bristol Electronics

USA . 8,210 parts In-Stock

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Prism Electronics

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ComSIT Distribution GmbH

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ComSIT USA

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Dan-Mar Components

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LIBRA Elektronik GmbH

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Semi Source

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Speed Components Ltd

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North Shore Components

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Inland Empire Components Inc.

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Netsource Technology, Inc.

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SPM Sales

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ECAB

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Electronics Depot

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A&K Electronics

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Microfarads

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J & M Industries LLC

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Flex Direct, LLC

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Sea View Technologies

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Mil-Aero Solutions, Inc.

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Vyrian

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Right Parts Inc.

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Electronic Expediters

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Nova Conductors

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AZTECH Wire

Italy . 737 parts In-Stock

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Ampacity Inc.

Singapore . 875 parts In-Stock

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Glotronic Ltd.

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Lixinc

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Continental Prestige Electronics

USA . 3,873 parts In-Stock

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Aranea Global

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Argo Parts USA

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Overview

Experience the superior quality and reliability of Vishay Intertechnology with the SI3443DV-T1 P-CHANNEL enhancement mode field effect transistor. Ideal for a variety of applications, this single configuration transistor offers a maximum drain current of 3.4 A and a maximum power dissipation of 2 W. With surface mount capability and a maximum operating temperature of 150°C, this transistor provides high performance in a compact package. Trust Vishay Intertechnology to deliver cutting-edge technology and unmatched value to meet your electronic component needs.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

This type of transistor offers low on-resistance and high input impedance, making it suitable for applications where low power consumption is desired.

Configuration: SINGLE

Single configuration transistors are simpler to design and implement, making them a cost-effective choice for basic circuit applications.

Surface Mount: YES

Surface mount transistors are easy to integrate into compact designs, making them ideal for space-constrained applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to control and have a higher input impedance, making them suitable for low-power switching applications.

Maximum Drain Current (Abs): 3.4 A

This high maximum drain current capability allows the transistor to handle higher loads, making it suitable for applications that require a higher current capacity.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2 W, this transistor can handle moderate power levels, making it suitable for a wide range of applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high switching speeds and low power consumption, making it ideal for applications that require efficient performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand higher temperatures, making it suitable for applications where heat dissipation is a concern.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish ensures good solderability and reliability, making it suitable for applications that require a durable connection.

Maximum Drain Current (ID): 3.4 A

This high maximum drain current rating allows the transistor to handle heavy loads, making it suitable for applications that require a high current capacity.

Technical Specifications

Other Function Transistors SI3443DV-T1 attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.4 A

Maximum Drain Current (ID):

3.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

SI3443DV-T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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