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BSP316P-E6327

Infineon Technologies

BSP316P-E6327 by Infineon Technologies

BSP316P-E6327 by Infineon is a P-CHANNEL transistor with max drain current of 0.68A and power dissipation of 1.8W. Ideal for enhancement mode operation in applications requiring high temperature tolerance up to 150°C, such as power management systems and automotive electronics.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 6,556 parts In-Stock

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VNN

France . 2,322 parts In-Stock

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Digiode

USA . 159 parts In-Stock

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Nova Conductors

Japan . 28 parts In-Stock

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Corohmni

South Africa . 81 parts In-Stock

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$1.248

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Modulus Dynamics

Lithuania . 9,589 parts In-Stock

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$1.818

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$1.745

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$1.673

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AZTECH Wire

Italy . 651 parts In-Stock

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Semicontronic

India . 322 parts In-Stock

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$23.050

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$22.474

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$22.358

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Ampacity Inc.

Singapore . 728 parts In-Stock

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Argo Parts USA

USA . 4,141 parts In-Stock

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Corphita

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Microchip USA

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Continental Prestige Electronics

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Bastille Electronics

Australia . 90 parts In-Stock

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Overview

Unleash the power of innovation with the BSP316P-E6327 by Infineon Technologies. As a leader in semiconductor technology, Infineon delivers top-quality P-CHANNEL transistors that are perfect for a wide range of applications. From enhancing performance in electronic devices to improving energy efficiency in power supplies, this product offers unrivaled value and benefits to customers. Trust in Infineon's expertise and experience to take your projects to the next level with the BSP316P-E6327.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors offer low on-resistance and high load capacity, making them suitable for high power applications.

Configuration: SINGLE

Single configuration transistors are easy to manage and provide a simple circuit design.

Surface Mount: YES

Surface mount transistors are compact and allow for efficient use of PCB space.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors require a positive gate voltage to turn on, offering easy control in electronic circuits.

Maximum Drain Current (Abs) (ID): 0.68 A

High maximum drain current allows for the handling of heavy loads and high power applications.

Maximum Power Dissipation (Abs): 1.8 W

High power dissipation capability ensures the transistor can operate efficiently even under high load conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high switching speeds and low input capacitance for improved performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can handle elevated temperature environments without compromising performance.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable soldering during the manufacturing process, ensuring a secure connection on the PCB.

Technical Specifications

Other Function Transistors BSP316P-E6327 attributes and parameters. Explore more Other Function Transistors devices from Infineon Technologies

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.68 A

Maximum Drain Current (ID):

.68 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BSP316P-E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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