Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.Some examples of other function transistors include:1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.
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FDN360P-NBGT003B
Fairchild Semiconductor
FDN360P-NBGT003B by Fairchild Semiconductor is a P-CHANNEL transistor with 2A max drain current and 0.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications. Ideal for circuits requiring high efficiency and low power consumption in temperatures up to 150°C.
SINGLE
2 A
METAL-OXIDE SEMICONDUCTOR
e3
1
ENHANCEMENT MODE
150 Cel
260
P-CHANNEL
.5 W
Other Transistors
YES
Tin (Sn)
30
FQD8P10TM-SB82052
Fairchild Semiconductor's FQD8P10TM-SB82052 is a P-CHANNEL MOSFET with 6.6A max drain current and 44W power dissipation. Ideal for enhancement mode applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high power handling capabilities in compact designs.
6.6 A
44 W
SP8M3FU6TB
ROHM
ROHM SP8M3FU6TB is a N/P-channel MOSFET with 5A max drain current and 2W max power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring efficient power management.
5 A
N-CHANNEL AND P-CHANNEL
2 W
RSS060P05FU6TB
ROHM's RSS060P05FU6TB is a P-CHANNEL MOSFET with 6A max drain current and 2W power dissipation. Ideal for enhancement mode operation in surface mount applications up to 150°C, making it suitable for various electronic devices requiring high power efficiency.
6 A
10
AON7401L
Alpha & Omega Semiconductor
Other Transistors;
AON7403L
BFG520,235
NXP Semiconductors
BFG520,235 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Perfect for RF amplification in compact devices.
.07 A
60
175 Cel
NPN
.3 W
TIN
BFG520/X,235
BFG520/X,235 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design ensures efficient integration in compact circuits.
BFG520/XR,235
BFG520/XR,235 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design enhances versatility in electronic circuits.
NE856M02-T1-AZ
Renesas Electronics
NE856M02-T1-AZ by Renesas Electronics is an NPN transistor with a max power dissipation of 1.2W and min DC current gain of 50. It operates at a max temperature of 150°C, making it suitable for various applications requiring a single configuration surface mount transistor with a collector current of 0.1A.
.1 A
50
1.2 W
NE856M03-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .1 A;
80
.125 W
3000 MHz
NE685M03-A
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; No. of Elements: 1;
.03 A
75
NE685M03-T1-A
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;
NE461M02-T1-AZ
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .25 A; No. of Elements: 1;
.25 A
40
NE58219-T1-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .06 A;
.06 A
125 Cel
.1 W
NE696M01-T1-A
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Minimum DC Current Gain (hFE): 80;
.15 W
NE678M04-T2-A
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 75;
.205 W
NE677M04-T2-A
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1;
.05 A
NE651R479A-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;
JUNCTION
N-CHANNEL
2.5 W
NE68019-T1-A
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
.035 A
NE68039-T1-A
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .035 A; Minimum DC Current Gain (hFE): 50;
.2 W
2SC5015-A
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;
2SC5015-T1-A
FDMC4435BZ-F126
FDMC4435BZ-F126 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 18A max drain current and 31W power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as power supplies and motor control systems.
18 A
e4
31 W
NICKEL PALLADIUM GOLD
BF245A,126
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
NO
Matte Tin (Sn)
BF512,235
BF512,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.
.25 W
BF861B,235
The NXP Semiconductors BF861B,235 is an N-CHANNEL junction field effect transistor (JFET) with a max power dissipation of 0.25W and a max operating temperature of 150°C. It is surface mountable and has a matte tin terminal finish. This transistor can be used in various applications requiring low noise amplification or switching functions.
MATTE TIN
BFG410W,135
BFG410W,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.054 W, a min DC current gain (hFE) of 50, and operates up to 150 °C. Perfect for RF amplification in compact devices.
.012 A
.054 W
BFG425W,135
NXP Semiconductors BFG425W,135 is an NPN transistor with a max power dissipation of 0.135W and min DC current gain of 50. It operates at up to 150°C, suitable for surface mount applications in electronics requiring a collector current of up to 0.03A.
.135 W
BFG480W,135
BFG480W,135 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.36 W, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.
.36 W
BFG67,235
BFG67,235 by NXP Semiconductors is an NPN single transistor ideal for high-frequency applications with a nominal transition frequency of 7500 MHz. It supports a max collector current of 50 mA and operates up to 175 °C. This surface-mount device excels in RF amplification tasks.
7500 MHz
BFQ67W,135
BFQ67W,135 by NXP Semiconductors is a single NPN transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, hFE of 60, and operates up to 150 °C. This versatile component is perfect for various electronic circuits requiring efficient signal amplification.
BFR30,235
BFR30,235 by NXP Semiconductors is an N-channel FET designed for surface mount applications. It features a max power dissipation of 0.3 W and operates at temperatures up to 150 °C. Ideal for various electronic circuits, it ensures reliable performance in demanding environments.
BFR31,235
BFR31,235 by NXP Semiconductors is an N-CHANNEL transistor with a max power dissipation of 0.3W and a max operating temperature of 150°C. It is surface mountable and commonly used in various electronic applications.
BFR520,235
NXP Semiconductors' BFR520,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 60, and max operating temp of 150°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.
BFR540,235
BFR540,235 by NXP Semiconductors is an NPN transistor designed for surface mount applications. It features a max power dissipation of 0.5W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Ideal for amplifying signals in various electronic circuits.
.12 A
BFR93AW,135
NXP Semiconductors' BFR93AW,135 is an NPN transistor with a single configuration and surface-mount capability. It boasts a max power dissipation of 0.3W, DC current gain of 40, and transition frequency of 4500MHz. Ideal for applications requiring high-frequency signal amplification in environments up to 150°C.
4500 MHz
BFS17A,235
NXP Semiconductors' BFS17A,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 20, and max operating temp of 175°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.
.025 A
20
BFS17W,135
NXP Semiconductors' BFS17W,135 is an NPN transistor with a max power dissipation of 0.3W and fT of 1600MHz. Ideal for applications requiring a single configuration, such as surface-mount designs in electronics operating up to 150°C with a collector current of 0.05A.
25
1600 MHz
BFS520,135
BFS520,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Perfect for efficient signal amplification in compact designs.
BF556A,235
BF556A,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.
BF862,235
NXP Semiconductors' BF862,235 is an N-CHANNEL JUNCTION FET with 0.225W power dissipation and 150°C max operating temp. It's surface-mountable with TIN terminal finish, ideal for high-frequency applications in RF amplifiers and mixers.
.225 W
BFG10,215
BFG10,215 by NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.4 W, a min DC current gain (hFE) of 25, and operates up to 175 °C. Ideal for RF amplification in compact devices.
.4 W
PBR941B,215
PBR941B,215 from NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.36W, a min DC current gain (hFE) of 100, and operates up to 150 °C. Ideal for high-frequency circuits with a transition frequency of 7000 MHz.
100
7000 MHz
PBSS4520X,146
PBSS4520X,146 from NXP Semiconductors is a single NPN transistor ideal for high-performance applications. It features a max power dissipation of 2.5W, a collector current of 5A, and operates up to 150 °C. This surface-mount device excels in RF amplification and switching tasks.
200
100 MHz
JANTX2N3019A
Microsemi
PMDPB65UP,115
PMDPB65UP,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET ideal for power management applications. It supports a max drain current of 3.5 A and power dissipation of 8.3 W, operating up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.
3.5 A
8.3 W
2SA2154CT-Y(TPL3)
Toshiba
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;
120
PNP
80 MHz
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