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BFS17A,235

NXP Semiconductors

BFS17A,235 by NXP Semiconductors

NXP Semiconductors' BFS17A,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 20, and max operating temp of 175°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 12,162 parts In-Stock

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Anansix

USA . 2,586 parts In-Stock

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Digiode

USA . 2,006 parts In-Stock

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VNN

France . 816 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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AZTECH Wire

Italy . 222 parts In-Stock

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$5.122

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Ampacity Inc.

Singapore . 1,027 parts In-Stock

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$34.050

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One Stop Electronics

USA . 586 parts In-Stock

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$54.050

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UNI Independent Distributors

Spain . 8,327 parts In-Stock

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Corphita

USA . 3,523 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Elevate your electronic applications with the BFS17A,235 by NXP Semiconductors. Known for their top-notch quality and reliability, NXP Semiconductors delivers a cutting-edge NPN transistor that excels in various functions. Whether you're looking to enhance signal amplification or regulate voltage levels, this single configuration transistor is the perfect solution. With a maximum power dissipation of 0.3W and a minimum DC current gain of 20, the BFS17A,235 guarantees optimal performance even in challenging environments. Trust NXP Semiconductors to provide you with the innovation and value you need to take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for audio applications and signal amplification.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into a variety of electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and cost during production.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures sufficient amplification in a circuit, allowing for accurate signal processing.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C ensures that this transistor can withstand elevated temperatures in various applications without failing.

Maximum Collector Current (IC): 0.025 A

The maximum collector current of 0.025A allows this transistor to handle moderate current loads, making it suitable for a wide range of applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection and long-term durability.

Maximum Time At Peak Reflow Temperature (s): 30

The short peak reflow time of 30 seconds minimizes thermal stress on the component during soldering, preventing damage and ensuring quality assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for efficient and reliable soldering of the transistor during assembly, leading to a durable and stable connection.

Technical Specifications

Other Function Transistors BFS17A,235 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BFS17A,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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