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BFS17A/C,215

NXP Semiconductors

BFS17A/C,215 by NXP Semiconductors

BFS17A/C,215 by NXP Semiconductors is a single NPN transistor ideal for surface mount applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 25, and operates up to 150 °C. Perfect for signal amplification in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,156 parts In-Stock

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Anansix

USA . 1,421 parts In-Stock

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Vyrian

USA . 1,361 parts In-Stock

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1,361

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One Stop Electronics

USA . 778 parts In-Stock

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$34.050

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778

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UNI Independent Distributors

Spain . 4,838 parts In-Stock

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Northwest PG Solutions

USA . 1,374 parts In-Stock

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Native Components

USA . 813 parts In-Stock

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Corphita

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Overview

Elevate your designs with the BFS17A/C,215 from NXP Semiconductors. Renowned for excellence, NXP delivers high-quality NPN transistors that ensure reliability and performance across a myriad of applications—from signal processing to amplification. With its compact surface mount design, this single transistor not only saves space but also enhances thermal efficiency. Experience the benefits of superior current gain and robust operation, ensuring your projects thrive in diverse environments.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used for amplification and switching applications, making them versatile and popular choices in electronic circuits.

Configuration: SINGLE

Single configuration allows for simple designs, making it easy to incorporate this transistor into various electronic applications.

Surface Mount: YES

Surface mount technology enables compact design and integration in modern PCBs, enhancing space efficiency and reducing manufacturing costs.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, the transistor can operate efficiently in low to medium power applications, providing reliability.

Minimum DC Current Gain (hFE): 25

A DC current gain of 25 ensures adequate amplification in many circuits, making this transistor suitable for diverse signal processing tasks.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature indicates robust performance under challenging thermal conditions, suitable for high-temperature environments.

Maximum Collector Current (IC): 0.025 A

A maximum collector current of 0.025 A suits low-power applications well, ensuring efficient operation without risk of overheating.

Technical Specifications

Other Function Transistors BFS17A/C,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFS17A/C,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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