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BFS17W,135

NXP Semiconductors

BFS17W,135 by NXP Semiconductors

NXP Semiconductors' BFS17W,135 is an NPN transistor with a max power dissipation of 0.3W and fT of 1600MHz. Ideal for applications requiring a single configuration, such as surface-mount designs in electronics operating up to 150°C with a collector current of 0.05A.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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VNN

France . 14,569 parts In-Stock

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Vyrian

USA . 10,206 parts In-Stock

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Digiode

USA . 3,364 parts In-Stock

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Anansix

USA . 2,790 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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One Stop Electronics

USA . 1,323 parts In-Stock

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$7.050

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AZTECH Wire

Italy . 474 parts In-Stock

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Ampacity Inc.

Singapore . 1,461 parts In-Stock

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UNI Independent Distributors

Spain . 8,173 parts In-Stock

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Corphita

USA . 3,979 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Elevate your electronic designs with the BFS17W,135 by NXP Semiconductors. This high-quality NPN transistor offers unmatched reliability and performance for a variety of applications. Whether you're working on telecommunications, RF amplification, or audio equipment, this surface-mount transistor delivers exceptional power dissipation and DC current gain. Trust in NXP Semiconductors' expertise to bring value and innovation to your projects. Experience the benefits of advanced technology and precision engineering with the BFS17W,135.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their ability to amplify signals and switch electronic circuits on and off. This makes the product versatile and suitable for a wide range of applications.

Surface Mount: YES

Surface mount transistors are smaller and lighter than through-hole components, making them ideal for compact electronic devices. This product's surface mount capability allows for efficient use of space in circuit board designs.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this product can handle moderate power levels without overheating. This ensures reliable performance in various electronic applications.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 indicates that the transistor is capable of providing significant amplification of the input signal. This feature makes the product suitable for amplification and signal processing tasks.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to perform reliably in various environmental conditions. It can withstand elevated temperatures without sacrificing performance.

Maximum Collector Current (IC): 0.05 A

The maximum collector current of 0.05A indicates that this transistor can handle moderate current levels. This makes it suitable for applications where a steady current flow is required.

Terminal Finish: TIN

The TIN terminal finish provides good protection against corrosion, ensuring the longevity of the product. It also improves the soldering process during assembly, making the transistor easier to work with.

Nominal Transition Frequency (fT): 1600 MHz

The high nominal transition frequency of 1600MHz indicates the speed at which this transistor can switch on and off. This makes it suitable for high-frequency applications such as RF amplification and signal processing.

Technical Specifications

Other Function Transistors BFS17W,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

BFS17W,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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