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BFS17WT/R

Philips Semiconductors

BFS17WT/R by Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1600 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

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Digiode

USA . 3,139 parts In-Stock

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Anansix

USA . 1,948 parts In-Stock

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M&R Communications

USA . 1,428 parts In-Stock

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Prism Electronics

USA . 272 parts In-Stock

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Vyrian

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Native Components

USA . 44 parts In-Stock

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$5.809

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One Stop Electronics

USA . 1,060 parts In-Stock

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$23.050

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UNI Independent Distributors

Spain . 2,182 parts In-Stock

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Perfect Parts

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Corphita

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Northwest PG Solutions

USA . 264 parts In-Stock

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Technical Specifications

Other Function Transistors BFS17WT/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Nominal Transition Frequency (fT):

Trade Compliance

BFS17WT/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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