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BFG520,235

NXP Semiconductors

BFG520,235 by NXP Semiconductors

BFG520,235 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Perfect for RF amplification in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,289 parts In-Stock

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Digiode

USA . 1,919 parts In-Stock

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Anansix

USA . 751 parts In-Stock

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Ampacity Inc.

Singapore . 1,002 parts In-Stock

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$19.050

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AZTECH Wire

Italy . 268 parts In-Stock

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$20.790

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One Stop Electronics

USA . 709 parts In-Stock

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$62.050

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Component Stockers USA

USA . 506 parts In-Stock

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$99.990

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UNI Independent Distributors

Spain . 7,582 parts In-Stock

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Northwest PG Solutions

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Native Components

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Microchip USA

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Overview

Unlock your design's potential with the BFG520,235 NPN transistor from NXP Semiconductors, a leader in innovative technology. This high-performance component is engineered for reliability and efficiency, making it ideal for various applications, from RF amplifiers to signal processing. With its robust thermal performance and exceptional current gain, you can trust the BFG520,235 to deliver consistent results, ensuring your projects achieve their highest potential. Choose quality; choose NXP.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in digital and analog circuits, making this product versatile for various applications.

Configuration: SINGLE

A single configuration allows for easy integration into compact designs, ideal for space-constrained projects.

Surface Mount: YES

Surface mount design enables efficient use of PCB space and simplifies automated assembly processes.

Maximum Power Dissipation (Abs): 0.3 W

A moderate power dissipation capability ensures reliability in low to moderate power applications.

Minimum DC Current Gain (hFE): 60

A gain of 60 provides decent amplification, suitable for a variety of signal processing tasks.

Maximum Operating Temperature: 175 °C

High operating temperature tolerance allows for functionality in demanding environments, increasing design flexibility.

Maximum Collector Current (IC): 0.07 A

The 70 mA collector current rating ensures the transistor can handle typical loads without risk of overloading.

Terminal Finish: TIN

The tin finish offers good solderability and corrosion resistance, promoting durability in connection points.

Maximum Time At Peak Reflow Temperature (s): 30

This specification supports efficient soldering processes, reducing the likelihood of damage during manufacturing.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C ensures compatibility with modern reflow soldering techniques for reliable assembly.

Technical Specifications

Other Function Transistors BFG520,235 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BFG520,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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