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BFG540W/XR,135

NXP Semiconductors

BFG540W/XR,135 by NXP Semiconductors

BFG540W/XR,135 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.5 W, a min DC current gain (hFE) of 100, and operates up to 175 °C. Perfect for surface mount designs in communication devices.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 49,999 parts In-Stock

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$0.110

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$0.110

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49,999

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Vyrian

USA . 3,817 parts In-Stock

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3,817

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Digiode

USA . 1,850 parts In-Stock

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1,850

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Anansix

USA . 799 parts In-Stock

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799

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Distributors (Availability)

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AZTECH Wire

Italy . 410 parts In-Stock

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$16.570

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410

$16.570

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One Stop Electronics

USA . 1,095 parts In-Stock

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$51.050

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UNI Independent Distributors

Spain . 5,299 parts In-Stock

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Corphita

USA . 3,302 parts In-Stock

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Northwest PG Solutions

USA . 2,302 parts In-Stock

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2,302

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Native Components

USA . 649 parts In-Stock

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Overview

Elevate your designs with the BFG540W/XR,135 from NXP Semiconductors, a leader in innovation and quality. This versatile NPN transistor excels in demanding applications, offering outstanding performance with remarkable thermal efficiency. With high current gain and reliable durability up to 175 °C, it’s perfect for automotive, telecom, and industrial uses. Trust in NXP's legacy of excellence to enhance your projects, ensuring long-lasting value and superior functionality.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in various applications due to their versatile switching capabilities and reliability, making this product suitable for diverse electronic circuits.

Configuration: SINGLE

Single configuration allows for simpler circuit designs and reduces complexity, making it ideal for compact applications.

Surface Mount: YES

Surface mount technology enables more efficient use of space on printed circuit boards, resulting in smaller and lighter devices.

Maximum Power Dissipation (Abs): 0.5 W

A maximum power dissipation of 0.5 W allows the transistor to operate effectively in low to moderate power applications without overheating.

Minimum DC Current Gain (hFE): 100

A minimum current gain of 100 ensures that the transistor can amplify signals effectively, providing improved performance in amplifying applications.

Maximum Operating Temperature: 175 °C

The ability to operate at high temperatures (up to 175 °C) makes this transistor suitable for demanding environments, ensuring reliability and performance stability.

Maximum Collector Current (IC): 0.12 A

With a maximum collector current of 0.12 A, this transistor can handle sufficient current for many low to moderate load applications, ensuring it meets a range of user needs.

Technical Specifications

Other Function Transistors BFG540W/XR,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFG540W/XR,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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