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BFG520/X,235

NXP Semiconductors

BFG520/X,235 by NXP Semiconductors

BFG520/X,235 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design ensures efficient integration in compact circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,173 parts In-Stock

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Digiode

USA . 4,354 parts In-Stock

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Anansix

USA . 1,483 parts In-Stock

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AZTECH Wire

Italy . 929 parts In-Stock

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$12.050

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One Stop Electronics

USA . 1,247 parts In-Stock

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UNI Independent Distributors

Spain . 6,432 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,702 parts In-Stock

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Corphita

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Northwest PG Solutions

USA . 1,958 parts In-Stock

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Native Components

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Microchip USA

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Overview

Elevate your projects with the BFG520/X,235 from NXP Semiconductors—a trusted leader in innovation. This high-quality NPN transistor is designed for superior performance in various applications, ensuring reliability and efficiency. With its compact surface mount design and impressive thermal resilience, you'll experience enhanced durability and effectiveness. Choose NXP for cutting-edge technology that drives your success, unlocking new possibilities in your electronic designs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used for their versatility in amplification and switching applications, making this product compatible with a broad range of projects.

Configuration: SINGLE

A single configuration allows for compact designs, making it ideal for space-constrained applications while providing reliable performance.

Surface Mount: YES

Surface mount capability enables easy integration into modern PCBs, improving manufacturing efficiency and saving valuable board space.

Maximum Power Dissipation (Abs): 0.3 W

With a power dissipation of 0.3 W, this transistor effectively handles moderate power loads, ensuring reliability in various applications.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures ample amplification capability, making this transistor suitable for driving loads effectively.

Maximum Operating Temperature: 175 °C

The high operating temperature rating allows this transistor to function effectively in demanding environments, enhancing its reliability in harsh conditions.

Maximum Collector Current (IC): 0.07 A

Supporting a maximum collector current of 0.07 A, this device is suitable for low to medium power applications, ensuring efficient performance.

Peak Reflow Temperature: 260 °C

A peak reflow temperature of 260 °C ensures compatibility with standard soldering processes, facilitating easy assembly in manufacturing setups.

Technical Specifications

Other Function Transistors BFG520/X,235 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFG520/X,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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