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BFG540W/XR

Philips Semiconductors

BFG540W/XR by Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A; Maximum Operating Temperature: 150 Cel;

Median Price

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Chip Stock

USA . 21,800 parts In-Stock

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One Stop Electronics

USA . 315 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

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A-Z Elektronik GmbH

Germany . 1,860 parts In-Stock

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Alle Elektronik GmbH

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Spain . 892 parts In-Stock

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Corphita

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Technical Specifications

Other Function Transistors BFG540W/XR attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

BFG540W/XR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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