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BFG541T/R

Philips Semiconductors

BFG541T/R by Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): .12 A; Maximum Operating Temperature: 150 Cel;

Median Price

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Lifecycle Status

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Digiode

USA . 1,840 parts In-Stock

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Vyrian

USA . 1,294 parts In-Stock

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VNN

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QIE Inc.

USA . 753 parts In-Stock

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Anansix

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Nova Conductors

Japan . 18 parts In-Stock

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Ampacity Inc.

Singapore . 1,147 parts In-Stock

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AZTECH Wire

Italy . 343 parts In-Stock

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One Stop Electronics

USA . 1,185 parts In-Stock

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Corphita

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UNI Independent Distributors

Spain . 3,264 parts In-Stock

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Aranea Global

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Technical Specifications

Other Function Transistors BFG541T/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFG541T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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