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BFG67,235

NXP Semiconductors

BFG67,235 by NXP Semiconductors

BFG67,235 by NXP Semiconductors is an NPN single transistor ideal for high-frequency applications with a nominal transition frequency of 7500 MHz. It supports a max collector current of 50 mA and operates up to 175 °C. This surface-mount device excels in RF amplification tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,178 parts In-Stock

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Anansix

USA . 2,096 parts In-Stock

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Digiode

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Native Components

USA . 584 parts In-Stock

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$0.141

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$0.136

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Northwest PG Solutions

USA . 2,225 parts In-Stock

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$0.155

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AZTECH Wire

Italy . 689 parts In-Stock

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$8.890

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One Stop Electronics

USA . 755 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,708 parts In-Stock

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UNI Independent Distributors

Spain . 5,980 parts In-Stock

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Microchip USA

USA . 5,928 parts In-Stock

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Corphita

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Overview

Unlock unparalleled performance with the BFG67,235 NPN transistor from NXP Semiconductors. Designed for excellence, this surface-mount marvel excels in high-frequency applications, delivering reliability and efficiency that you can trust. With a robust construction capable of handling elevated temperatures, it’s perfect for communication devices and industrial systems. Experience superior quality and innovation that drives your projects forward—choose BFG67,235 for unmatched value!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN configuration is commonly used for switching and amplification applications, making it versatile for various electronic designs.

Configuration: SINGLE

The single configuration allows for simple integration into circuits, especially in low-power applications.

Surface Mount: YES

Surface mount capability allows for space-saving designs and easier automated assembly, enhancing production efficiency.

Maximum Power Dissipation (Abs): 0.3 W

With a power dissipation of 0.3 W, this transistor is suitable for low to medium power applications, ensuring reliability without overheating.

Minimum DC Current Gain (hFE): 60

A minimum hFE of 60 provides a good level of current amplification, making it effective for signal amplification in various circuits.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature indicates robustness, allowing the product to function in demanding thermal environments.

Maximum Collector Current (IC): 0.05 A

With a collector current rating of 0.05 A, this transistor is suitable for small signal amplification and switching applications.

Terminal Finish: TIN

The TIN terminal finish provides good solderability and corrosion resistance, ensuring a long-lasting and reliable connection.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum reflow time of 30 seconds minimizes the risk of thermal damage during assembly, ensuring device integrity.

Peak Reflow Temperature: 260 °C

Operating at a peak reflow temperature of 260 °C allows for compatibility with lead-free soldering processes, improving environmental compliance.

Nominal Transition Frequency (fT): 7500 MHz

A nominal transition frequency of 7500 MHz enables high-speed switching and makes the transistor suitable for RF applications.

Technical Specifications

Other Function Transistors BFG67,235 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

BFG67,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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