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PBR941B,215

NXP Semiconductors

PBR941B,215 by NXP Semiconductors

PBR941B,215 from NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.36W, a min DC current gain (hFE) of 100, and operates up to 150 °C. Ideal for high-frequency circuits with a transition frequency of 7000 MHz.

Median Price

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Lifecycle Status

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4

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1k+

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Chip1Stop

Japan . 15 parts In-Stock

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Vyrian

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Digiode

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Anansix

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AZTECH Wire

Italy . 858 parts In-Stock

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Ampacity Inc.

Singapore . 577 parts In-Stock

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One Stop Electronics

USA . 843 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,260 parts In-Stock

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Microchip USA

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UNI Independent Distributors

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Corphita

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Overview

Unlock the potential of your projects with the PBR941B,215 from NXP Semiconductors. Renowned for quality and innovation, NXP delivers this versatile NPN transistor, perfect for a wide range of applications including signal amplification and switching. With superior performance at high temperatures and exceptional reliability, the PBR941B,215 ensures your designs are efficient and robust, maximizing value and extending the lifespan of your electronic solutions. Choose excellence; choose NXP.

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN configuration allows for efficient switching and amplification, making this transistor versatile for a variety of electronic applications.

Configuration: SINGLE

A single configuration offers simplicity and ease of integration into circuits, reducing complexity in design.

Surface Mount: YES

Surface mount capability enables compact design and high-density layouts, making it suitable for modern electronic devices.

Maximum Power Dissipation (Abs): 0.36 W

With a maximum power dissipation of 0.36 W, this transistor can handle significant loads while minimizing heat buildup.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 indicates strong amplification potential, ensuring reliable performance in signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to function effectively in demanding environments, enhancing its reliability.

Maximum Collector Current (IC): 0.05 A

The specified collector current rating means it can serve in low to moderate current applications, making it suitable for various electronic circuits.

Terminal Finish: TIN

The TIN terminal finish provides excellent corrosion resistance and solderability, ensuring durability and ease of assembly.

Maximum Time At Peak Reflow Temperature (s): 30

The ability to withstand a peak reflow time of 30 seconds during soldering processes ensures robust attachment on PCBs without damaging the component.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows compatibility with most standard reflow soldering processes used in manufacturing.

Nominal Transition Frequency (fT): 7000 MHz

A nominal transition frequency of 7000 MHz makes this transistor highly effective for high-frequency applications, enhancing its usability in RF circuits.

Technical Specifications

Other Function Transistors PBR941B,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

PBR941B,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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