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PMDPB65UP,115

NXP Semiconductors

PMDPB65UP,115 by NXP Semiconductors

PMDPB65UP,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET ideal for power management applications. It supports a max drain current of 3.5 A and power dissipation of 8.3 W, operating up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 7,248 parts In-Stock

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Digiode

USA . 1,686 parts In-Stock

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Anansix

USA . 1,106 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 250 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$0.461

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$0.420

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$0.378

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AZTECH Wire

Italy . 588 parts In-Stock

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$18.500

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One Stop Electronics

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$57.050

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Kepictronics

USA . 71,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,307 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,817 parts In-Stock

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Corphita

USA . 4,818 parts In-Stock

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Microchip USA

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UNI Independent Distributors

Spain . 1,043 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

UK . 250 parts In-Stock

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Overview

Unlock exceptional performance with the PMDPB65UP,115 from NXP Semiconductors. Renowned for their cutting-edge technology and reliability, NXP delivers a P-channel transistor designed for high efficiency in demanding applications. This enhancement mode device boasts robust power handling and thermal stability, making it ideal for automotive, industrial, and consumer electronics. Elevate your designs with a trusted partner that prioritizes quality and innovation!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

The P-CHANNEL configuration provides flexibility in circuit design, allowing for effective high-side switching applications, making this transistor a suitable choice for various power management tasks.

Surface Mount: YES

Being surface mountable enables easier integration into compact designs, saves space on PCBs, and supports automated assembly, making it ideal for modern electronics.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation enhances efficiency, allowing for lower on-resistance and better performance in applications requiring high-speed switching.

Maximum Drain Current (Abs) (ID): 3.5 A

With a maximum drain current of 3.5 A, this transistor can handle substantial loads, making it versatile for powering a range of devices.

Maximum Power Dissipation (Abs): 8.3 W

An 8.3 W power dissipation rating indicates robust thermal management capabilities, ensuring reliable operation even under higher power conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOSFET technology lends itself to high input impedance and rapid switching speeds, providing efficiency and responsiveness in electronic circuits.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C makes this transistor suitable for high-temperature environments, ensuring reliability in harsh conditions.

Terminal Finish: TIN

A tin terminal finish enhances solderability, ensuring reliable connections and durability in various environmental conditions.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow time of 30 seconds allows for effective soldering processes in manufacturing, maintaining the integrity of the component during assembly.

Peak Reflow Temperature °C: 260

The ability to withstand peak reflow temperatures of 260 °C assures compatibility with various soldering techniques, making it practical for use in a wide range of applications.

Technical Specifications

Other Function Transistors PMDPB65UP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMDPB65UP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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