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PMDPB80XP,115

NXP Semiconductors

PMDPB80XP,115 by NXP Semiconductors

PMDPB80XP,115 by NXP Semiconductors is a P-CHANNEL FET with 2.7A max drain current and 6.25W power dissipation in enhancement mode. Ideal for applications requiring high temperature resistance up to 150°C, surface mount capability, and metal-oxide semiconductor technology.

Median Price

$0.097

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Arrow

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Verical

USA . 12,000 parts In-Stock

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Rochester

USA . 3,000 parts In-Stock

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$0.127

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$0.105

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$0.094

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Digiode

USA . 3,732 parts In-Stock

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Chip Stock

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Vyrian

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Corphita

USA . 2,020 parts In-Stock

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AZTECH Wire

Italy . 8,493 parts In-Stock

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Component Stockers USA

USA . 71,693 parts In-Stock

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$0.090

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$0.070

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Microchip USA

USA . 4,272 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

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Overview

Unleash the power of innovation with the PMDPB80XP,115 from NXP Semiconductors. This P-Channel Enhancement Mode Field Effect Transistor offers superior performance and reliability for a wide range of applications. With a maximum drain current of 2.7 A and a peak power dissipation of 6.25 W, this transistor is designed to elevate your projects to new heights. Trust in NXP's reputation for quality and precision engineering to deliver unrivaled value and benefits to customers. Upgrade your electronics with the PMDPB80XP,115 and experience the difference today.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low ON-resistance and high current-carrying capabilities, making this product suitable for applications requiring efficient power management.

Surface Mount: YES

Surface mount technology allows for easy and compact integration onto printed circuit boards, saving space and simplifying manufacturing processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers precise control over the flow of current, making this transistor ideal for applications where accurate signal amplification is critical.

Maximum Power Dissipation (Abs): 6.25 W

The high power dissipation rating ensures reliable performance under demanding conditions, making this transistor suitable for high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides excellent performance characteristics such as low power consumption and high switching speeds, making this transistor energy-efficient and responsive.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, ensuring reliability in various environmental conditions.

Terminal Finish: TIN

The tin terminal finish ensures reliable solder connections, preventing corrosion and ensuring long-term durability in electronic assemblies.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature allows for efficient soldering processes, reducing the risk of thermal damage to the transistor during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability enables robust soldering of the transistor in lead-free processes, contributing to the overall reliability of the product.

Technical Specifications

Other Function Transistors PMDPB80XP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Drain Current (Abs) (ID):

2.7 A

Maximum Drain Current (ID):

2.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMDPB80XP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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