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PMDPB58UPE,115

NXP Semiconductors

PMDPB58UPE,115 by NXP Semiconductors

NXP Semiconductors' PMDPB58UPE,115 is a P-CHANNEL FET with 3.6A max drain current and 8.33W power dissipation. Ideal for applications requiring high efficiency in surface mount configurations at up to 150°C operating temperature.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 15,000 parts In-Stock

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$0.114

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$0.114

Verical

USA . 6,000 parts In-Stock

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$0.114

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$0.114

Chip1Stop

Japan . 6,000 parts In-Stock

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$0.130

6,000

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$0.130

EBV Elektronik

Germany . 3,000 parts In-Stock

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Digiode

USA . 155 parts In-Stock

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$0.598

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$0.598

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Chip Stock

USA . 137,000 parts In-Stock

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Sensible Micro Corp

USA . 9,000 parts In-Stock

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Vyrian

USA . 6,832 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.892

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Bristol Electronics

USA . 2,550 parts In-Stock

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2,550

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Anansix

USA . 530 parts In-Stock

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530

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Nova Conductors

Japan . 10 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 18,527 parts In-Stock

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$0.094

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Component Stockers USA

USA . 114,811 parts In-Stock

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$0.120

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$0.110

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$0.100

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$0.110

114,811

$0.120

$0.110

$0.100

$0.110

AZTECH Wire

Italy . 13,677 parts In-Stock

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$0.130

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Corphita

USA . 4,302 parts In-Stock

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$0.567

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$0.567

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Corohmni

South Africa . 200 parts In-Stock

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$1.572

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$1.572

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Futuretech Components

Singapore . 50,000 parts In-Stock

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Perfect Parts

USA . 26,880 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,833 parts In-Stock

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UNI Independent Distributors

Spain . 4,511 parts In-Stock

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Argo Parts USA

USA . 3,274 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,875 parts In-Stock

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Kepictronics

USA . 1,236 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Supply Digital

USA . 226 parts In-Stock

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Overview

Looking for a high-quality P-CHANNEL Other Function Transistor? Look no further than the PMDPB58UPE,115 by NXP Semiconductors. With enhanced performance and reliability, this surface-mount transistor is perfect for a variety of applications. From consumer electronics to industrial equipment, this transistor offers a maximum drain current of 3.6 A and a maximum power dissipation of 8.33 W, making it a versatile and valuable component for any project. Trust NXP Semiconductors for top-notch technology that delivers exceptional results every time.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low on-state resistance and high current-carrying capability, making them ideal for high-power applications.

Surface Mount: YES

Surface mount packaging saves space and allows for automated assembly, making the product suitable for compact electronic devices and mass production.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easy control of the current flow with a positive gate voltage, enhancing the efficiency and performance of the circuit.

Maximum Drain Current (Abs): 3.6 A

High maximum drain current rating provides the capability to handle high current loads without the risk of damaging the transistor, making it suitable for power applications.

Maximum Power Dissipation (Abs): 8.33 W

High power dissipation rating ensures the transistor can handle significant power levels without overheating, improving reliability and longevity of the product.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance, low noise, and excellent high-frequency performance, making the product suitable for signal amplification and processing.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate in harsh environments without performance degradation, ensuring reliability in various applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and longevity of the product.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature reduces the risk of thermal stress on the component during assembly, improving overall product reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for lead-free soldering processes, complying with environmental regulations and industry standards.

Technical Specifications

Other Function Transistors PMDPB58UPE,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Drain Current (Abs) (ID):

3.6 A

Maximum Drain Current (ID):

3.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMDPB58UPE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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