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PMDPB85UPE,115

NXP Semiconductors

PMDPB85UPE,115 by NXP Semiconductors

PMDPB85UPE,115 from NXP Semiconductors is a P-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 3.7 A and operates at temperatures up to 150 °C, making it ideal for efficient power management in compact devices. Its surface mount design ensures easy integration into various electronic circuits.

Median Price

$0.203

Lifecycle Status

Suppliers In-Stock

5

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1k+

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Verical

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Chip Stock

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AZTECH Wire

Italy . 6,235 parts In-Stock

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Microchip USA

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Advanced Electronics

New Zealand . 270 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Overview

Elevate your designs with the PMDPB85UPE,115 from NXP Semiconductors, a leader in innovative technology. This P-channel enhancement mode transistor delivers outstanding performance and reliability, ensuring optimal efficiency in various applications like power management and signal switching. With its robust thermal capabilities and surface-mount convenience, it empowers engineers to create solutions that stand out in today's competitive market. Experience unparalleled quality and support with NXP—where your success is our priority!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

The P-channel configuration allows for easier switching in high-side applications, making it ideal for various circuit designs.

Surface Mount: YES

Surface mount design enhances space efficiency and enables automated assembly, reducing manufacturing costs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides improved control over current flow, enhancing performance in switching applications.

Maximum Drain Current (Abs) (ID): 3.7 A

With a maximum drain current of 3.7 A, this transistor can handle a substantial load, making it suitable for various applications.

Maximum Power Dissipation (Abs): 0.515 W

A power dissipation capability of 0.515 W allows for effective thermal management, making this part reliable under typical operating conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Using MOSFET technology, this transistor offers high efficiency and low on-resistance, which is crucial for power management applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliability in demanding environments, making it versatile for different applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability, which ensures a reliable connection in various assembly processes.

Maximum Time At Peak Reflow Temperature (s): 30

A reflow time of up to 30 seconds allows for flexibility in the assembly process without compromising component integrity.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C is suitable for modern soldering techniques, ensuring compatibility with a wide range of PCB technologies.

Technical Specifications

Other Function Transistors PMDPB85UPE,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Drain Current (Abs) (ID):

3.7 A

Maximum Drain Current (ID):

3.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMDPB85UPE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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