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BFR30,235

NXP Semiconductors

BFR30,235 by NXP Semiconductors

BFR30,235 by NXP Semiconductors is an N-channel FET designed for surface mount applications. It features a max power dissipation of 0.3 W and operates at temperatures up to 150 °C. Ideal for various electronic circuits, it ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,821 parts In-Stock

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6,821

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Anansix

USA . 2,321 parts In-Stock

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2,321

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Digiode

USA . 1,492 parts In-Stock

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1,492

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Distributors (Availability)

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Native Components

USA . 219 parts In-Stock

1+ parts

$0.413

100+ parts

-

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$0.397

219

$0.413

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$0.397

Northwest PG Solutions

USA . 1,184 parts In-Stock

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$0.455

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$0.401

1,184

$0.455

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$0.401

One Stop Electronics

USA . 1,526 parts In-Stock

1+ parts

$12.050

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1,526

$12.050

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AZTECH Wire

Italy . 1,026 parts In-Stock

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$16.320

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1,026

$16.320

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Component Stockers USA

USA . 237 parts In-Stock

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$99.990

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237

$99.990

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Corphita

USA . 2,902 parts In-Stock

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2,902

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UNI Independent Distributors

Spain . 858 parts In-Stock

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858

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Overview

Elevate your designs with the BFR30,235 from NXP Semiconductors, a trusted leader in innovation. This N-channel transistor excels in performance and reliability, ensuring exceptional quality for your projects. With its compact surface mount design, it seamlessly integrates into various applications, from industrial automation to consumer electronics. Experience enhanced efficiency and durability, empowering you to bring your ideas to life with confidence.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer higher efficiency and faster switching speeds, making them ideal for a variety of applications.

Surface Mount: YES

Surface mount technology allows for smaller designs and higher circuit density, which is perfect for modern electronics.

Maximum Power Dissipation (Abs): 0.3 W

A power dissipation of 0.3 W indicates that this transistor can handle a moderate amount of power, making it suitable for lower power applications.

Field Effect Transistor Technology: JUNCTION

Junction FETs provide excellent input impedance and low noise, ensuring reliable performance in sensitive applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor is capable of performing reliably in high-temperature environments.

Terminal Finish: TIN

Tin finish provides good solderability and corrosion resistance, enhancing the device's longevity and reliability.

Maximum Time At Peak Reflow Temperature: 30 s

A reflow process time of 30 seconds is optimal for preserving the integrity of the component while ensuring a robust solder joint.

Peak Reflow Temperature: 260 °C

With a peak reflow temperature of 260 °C, this transistor can withstand rigorous soldering processes without degrading its performance.

Technical Specifications

Other Function Transistors BFR30,235 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Field Effect Transistor Technology:

JUNCTION

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BFR30,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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