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BFR31T/R

Philips Semiconductors

BFR31T/R by Philips Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Field Effect Transistor Technology: JUNCTION;

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VNN

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Anansix

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Vyrian

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 370 parts In-Stock

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AZTECH Wire

Italy . 709 parts In-Stock

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One Stop Electronics

USA . 1,296 parts In-Stock

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UNI Independent Distributors

Spain . 6,315 parts In-Stock

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Corphita

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Technical Specifications

Other Function Transistors BFR31T/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Field Effect Transistor Technology:

JUNCTION

JESD-609 Code:

e3

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

BFR31T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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