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BFR36

STMicroelectronics

BFR36 by STMicroelectronics

STMicroelectronics' BFR36 NPN transistor has a max power dissipation of 0.8W, min DC current gain of 40, and fT of 1000MHz. Ideal for applications requiring a single configuration with max collector current of 0.15A at up to 175 °C operating temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,399 parts In-Stock

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3,399

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Vyrian

USA . 1,124 parts In-Stock

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1,124

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Anansix

USA . 609 parts In-Stock

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609

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ECAB

Sweden . 223 parts In-Stock

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223

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LittleDiode

UK . 15 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 7 parts In-Stock

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Native Components

USA . 672 parts In-Stock

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$0.240

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$0.230

672

$0.240

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$0.230

Northwest PG Solutions

USA . 1,225 parts In-Stock

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$0.264

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$0.233

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$0.264

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$0.233

IDEA Electronic Components Group

UK . 1,035 parts In-Stock

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$1.558

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$1.403

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1,035

$1.558

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$1.403

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MKK Technologies

India . 1,953 parts In-Stock

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$2.931

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1,953

$2.931

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DigiPath Technology Company

USA . 1,953 parts In-Stock

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$2.931

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1,953

$2.931

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Corphita

USA . 959 parts In-Stock

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Parana Technologies

USA . 686 parts In-Stock

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$1.863

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$1.863

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Perfect Parts

USA . 13 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 6 parts In-Stock

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Assy Fe

Spain . 3 parts In-Stock

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Overview

Upgrade your electronic projects with the BFR36 by STMicroelectronics, a high-quality NPN transistor that offers reliable performance and durability. Manufactured by one of the leading names in the industry, this versatile component is perfect for a wide range of applications in electronics. With a maximum power dissipation of 0.8W and a nominal transition frequency of 1000 MHz, the BFR36 delivers exceptional value and efficiency to customers looking for top-notch performance in their designs. Trust STMicroelectronics to provide you with the best in semiconductor technology.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and suitable for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into different electronic systems.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8 W, this transistor can handle moderate power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates good amplification capability, allowing the transistor to provide sufficient output for the input signal.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C ensures that the transistor can withstand elevated temperatures in various environments.

Maximum Collector Current (IC): 0.15 A

With a maximum collector current of 0.15 A, this transistor can handle moderate current levels, making it suitable for a wide range of applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and reliability in the connection, ensuring secure attachment to the circuit board.

Nominal Transition Frequency (fT): 1000 MHz

The high nominal transition frequency of 1000 MHz indicates fast switching speeds and high-frequency performance, making this transistor ideal for RF applications.

Technical Specifications

Other Function Transistors BFR36 attributes and parameters. Explore more Other Function Transistors devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Nominal Transition Frequency (fT):

Trade Compliance

BFR36 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-118-5685, 5961991185685

NIIN

991185685

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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