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BFR30T/R

Philips Semiconductors

BFR30T/R by Philips Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;

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3

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Anansix

USA . 2,755 parts In-Stock

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Digiode

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Vyrian

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Native Components

USA . 112 parts In-Stock

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$0.166

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$0.159

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Northwest PG Solutions

USA . 1,645 parts In-Stock

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$0.183

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One Stop Electronics

USA . 803 parts In-Stock

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$18.050

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Corphita

USA . 3,502 parts In-Stock

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UNI Independent Distributors

Spain . 701 parts In-Stock

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Technical Specifications

Other Function Transistors BFR30T/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Field Effect Transistor Technology:

JUNCTION

JESD-609 Code:

e3

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

BFR30T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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