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BFG10,215

NXP Semiconductors

BFG10,215 by NXP Semiconductors

BFG10,215 by NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.4 W, a min DC current gain (hFE) of 25, and operates up to 175 °C. Ideal for RF amplification in compact devices.

Median Price

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3

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1k+

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Digiode

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Vyrian

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Anansix

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One Stop Electronics

USA . 730 parts In-Stock

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AZTECH Wire

Italy . 445 parts In-Stock

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Microchip USA

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Kepictronics

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Northwest PG Solutions

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UNI Independent Distributors

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Perfect Parts

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Corphita

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Cyclops Electronics Ltd (Excess)

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Native Components

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Overview

Unlock unparalleled performance with the BFG10,215 from NXP Semiconductors—a leader in innovation and quality. This versatile NPN transistor is designed for reliable operation in demanding environments, ensuring your projects thrive. With its robust power handling and superior temperature tolerance, it's perfect for a variety of applications, from RF amplification to signal processing. Experience efficiency and durability tailored to elevate your designs!

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN configuration allows for efficient switching and amplifying capabilities, making it suitable for various electronic applications.

Configuration: SINGLE

A single configuration provides simplicity in design and ease of integration into circuits, which is beneficial for compact and efficient electronics.

Surface Mount: YES

Surface mount compatibility ensures a smaller footprint on PCBs, facilitating high-density circuit designs and improving manufacturability.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4 W, this transistor can effectively handle low power applications while preventing overheating.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 means it can amplify small input signals effectively, making it ideal for signal processing tasks.

Maximum Operating Temperature: 175 °C

Operating at a maximum temperature of 175 °C ensures reliability in high-temperature environments, suitable for industrial applications.

Maximum Collector Current (IC): 0.25 A

A maximum collector current of 0.25 A allows for moderate current handling, making it suitable for controlling loads in various circuits.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides excellent solderability and corrosion resistance, ensuring long-term durability and reliability in connections.

Technical Specifications

Other Function Transistors BFG10,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BFG10,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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