Loading...

BFG425W,135

NXP Semiconductors

BFG425W,135 by NXP Semiconductors

NXP Semiconductors BFG425W,135 is an NPN transistor with a max power dissipation of 0.135W and min DC current gain of 50. It operates at up to 150°C, suitable for surface mount applications in electronics requiring a collector current of up to 0.03A.

Median Price

$0.182

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 90 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

-

10k+ parts

-

90

$0.182

-

-

-

VNN

France . 3,530 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,530

-

-

-

-

Vyrian

USA . 2,363 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,363

-

-

-

-

Digiode

USA . 1,872 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,872

-

-

-

-

Anansix

USA . 555 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

555

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,891 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

-

10k+ parts

$0.178

3,891

$0.182

-

-

$0.178

Argo Parts USA

USA . 624 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

-

10k+ parts

$0.177

624

$0.182

-

-

$0.177

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.182

100+ parts

$0.178

1k+ parts

-

10k+ parts

-

50

$0.182

$0.178

-

-

AZTECH Wire

Italy . 327 parts In-Stock

1+ parts

$11.698

100+ parts

-

1k+ parts

-

10k+ parts

-

327

$11.698

-

-

-

Ampacity Inc.

Singapore . 283 parts In-Stock

1+ parts

$18.050

100+ parts

-

1k+ parts

-

10k+ parts

-

283

$18.050

-

-

-

One Stop Electronics

USA . 1,240 parts In-Stock

1+ parts

$35.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,240

$35.050

-

-

-

UNI Independent Distributors

Spain . 5,109 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,109

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 4,757 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,757

-

-

-

-

Corphita

USA . 174 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

174

-

-

-

-

Overview

Discover the NXP Semiconductors BFG425W,135, a high-quality NPN transistor that offers unparalleled performance and reliability. Ideal for a wide range of applications, this single configuration transistor is surface mountable, making it perfect for compact designs. With a maximum power dissipation of 0.135W and a minimum DC current gain of 50, this transistor can handle up to 0.03A of collector current. Trust NXP Semiconductors for cutting-edge technology and superior products that deliver value and efficiency to customers.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for a variety of applications that require signal amplification.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into different electronic circuits.

Surface Mount: YES

Being surface mountable, this transistor is suitable for compact electronic designs where space is limited, allowing for more efficient use of space on the PCB.

Maximum Power Dissipation (Abs): 0.135 W

With a maximum power dissipation of 0.135 W, this transistor can handle moderate power levels, making it suitable for a wide range of low to moderate power applications.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 ensures consistent and reliable amplification of signals, making this transistor a good choice for applications that require stable signal processing.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can operate reliably in a variety of environments without overheating, ensuring its longevity and reliability.

Maximum Collector Current (IC): 0.03 A

The maximum collector current of 0.03 A allows this transistor to handle moderate current loads, making it suitable for applications that require signal switching or amplification at low to moderate current levels.

Terminal Finish: TIN

The TIN terminal finish provides good solderability and electrical conductivity, ensuring reliable connections in the circuit and easy integration of the transistor into the PCB.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand the soldering process during PCB assembly, ensuring a secure and reliable connection to the PCB.

Technical Specifications

Other Function Transistors BFG425W,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Trade Compliance

BFG425W,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7