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BFG410W,135

NXP Semiconductors

BFG410W,135 by NXP Semiconductors

BFG410W,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.054 W, a min DC current gain (hFE) of 50, and operates up to 150 °C. Perfect for RF amplification in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,053 parts In-Stock

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Digiode

USA . 2,480 parts In-Stock

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2,480

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Anansix

USA . 2,279 parts In-Stock

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Native Components

USA . 872 parts In-Stock

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$0.175

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$0.168

872

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$0.168

Northwest PG Solutions

USA . 181 parts In-Stock

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$0.192

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$0.169

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$0.169

One Stop Electronics

USA . 1,299 parts In-Stock

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$17.050

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1,299

$17.050

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AZTECH Wire

Italy . 1,152 parts In-Stock

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$20.060

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UNI Independent Distributors

Spain . 7,626 parts In-Stock

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Corphita

USA . 951 parts In-Stock

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Microchip USA

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Overview

Experience unmatched reliability and performance with the BFG410W,135 from NXP Semiconductors. Renowned for their excellence in innovation, NXP delivers this high-quality NPN transistor designed for diverse applications, ensuring efficiency and durability even in demanding environments. Whether you're enhancing consumer electronics or optimizing industrial systems, the BFG410W,135 provides exceptional gain and power handling, empowering your projects to excel. Trust in NXP's legacy of quality for superior results that drive success.

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN configuration ensures that the transistor is suitable for a variety of switching and amplification tasks, making it versatile for different applications.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, offering ease of use in compact designs.

Surface Mount: YES

Surface mount capability allows for smaller PCB designs and the possibility of automated assembly processes, enhancing production efficiency.

Maximum Power Dissipation (Abs): 0.054 W

With a relatively low power dissipation, this transistor is suitable for low-power applications, ensuring efficiency and effective thermal management.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 indicates good amplification characteristics, making this transistor effective for signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature offers reliability in harsh environments, making this transistor suitable for industrial applications.

Maximum Collector Current (IC): 0.012 A

The capability to handle a collector current of 0.012 A allows for adequate performance in low-current applications without overheating.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and long-term performance.

Maximum Time At Peak Reflow Temperature: 30 s

The specified maximum reflow time allows for compatibility with standard soldering processes, ensuring easy incorporation into manufacturing workflows.

Peak Reflow Temperature: 260 °C

A peak reflow temperature of 260 °C ensures that the component can withstand the soldering process without degrading, enhancing reliability in assembly.

Technical Specifications

Other Function Transistors BFG410W,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BFG410W,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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