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BFG480W,135

NXP Semiconductors

BFG480W,135 by NXP Semiconductors

BFG480W,135 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.36 W, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,315 parts In-Stock

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Digiode

USA . 1,680 parts In-Stock

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1,680

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Anansix

USA . 677 parts In-Stock

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677

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Native Components

USA . 239 parts In-Stock

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$0.342

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$0.328

239

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$0.328

Northwest PG Solutions

USA . 348 parts In-Stock

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$0.376

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$0.332

348

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$0.332

Ampacity Inc.

Singapore . 960 parts In-Stock

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$2.050

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960

$2.050

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AZTECH Wire

Italy . 95 parts In-Stock

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$12.880

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95

$12.880

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One Stop Electronics

USA . 1,237 parts In-Stock

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$48.050

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1,237

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QUARKTWIN TECHNOLOGY LTD

USA . 8,171 parts In-Stock

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UNI Independent Distributors

Spain . 7,726 parts In-Stock

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Corphita

USA . 4,192 parts In-Stock

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Overview

Elevate your projects with the BFG480W,135 from NXP Semiconductors, a trusted name in innovation. This versatile NPN transistor is designed for superior performance and reliability, making it an ideal choice for various applications, from RF amplifiers to signal processing. Experience enhanced efficiency and durability, along with easy surface mount integration. Trust in NXP's commitment to quality and unlock your design's full potential with this exceptional component!

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN configuration is widely used in various applications, making this transistor versatile for interfacing and signal amplification.

Configuration: SINGLE

A single configuration allows for simpler designs and easier integration into circuits, reducing complexity and saving board space.

Surface Mount: YES

Surface mount technology enables compact designs and higher circuit density, ideal for modern electronic applications.

Maximum Power Dissipation (Abs): 0.36 W

With a maximum power dissipation of 0.36 W, this transistor can efficiently handle power without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 40

A minimum current gain of 40 indicates good amplification capabilities, making it suitable for various amplification applications.

Maximum Operating Temperature: 150 °C

Designed to operate at high temperatures up to 150 °C, this transistor is ideal for use in demanding environments where thermal stability is crucial.

Maximum Collector Current (IC): 0.25 A

With a maximum collector current of 0.25 A, this transistor can handle moderate loads, making it suitable for a range of applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability and resistance to corrosion, ensuring longevity and reliability in electronic connections.

Maximum Time At Peak Reflow Temperature (s): 30

Supporting a maximum reflow time of 30 seconds ensures compatibility with standard soldering processes, simplifying assembly.

Peak Reflow Temperature: 260 °C

The high peak reflow temperature of 260 °C allows for robust soldering processes, enhancing the durability of solder joints in high-performance applications.

Technical Specifications

Other Function Transistors BFG480W,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BFG480W,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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