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BFR93AW,135

NXP Semiconductors

BFR93AW,135 by NXP Semiconductors

NXP Semiconductors' BFR93AW,135 is an NPN transistor with a single configuration and surface-mount capability. It boasts a max power dissipation of 0.3W, DC current gain of 40, and transition frequency of 4500MHz. Ideal for applications requiring high-frequency signal amplification in environments up to 150°C.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 35,345 parts In-Stock

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-

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$0.119

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$0.099

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$0.088

35,345

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$0.119

$0.099

$0.088

Verical

USA . 35,345 parts In-Stock

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$0.110

35,345

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$0.110

Distributors (In-Stock)

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Nova Conductors

Japan . 18 parts In-Stock

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$0.087

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18

$0.087

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Digiode

USA . 4,123 parts In-Stock

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$0.093

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$0.093

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DigiKey Marketplace

USA . 87,623 parts In-Stock

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Vyrian

USA . 2,920 parts In-Stock

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VNN

France . 1,254 parts In-Stock

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Anansix

USA . 604 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 41,703 parts In-Stock

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$0.083

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41,703

$0.083

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Semicontronic

India . 41,639 parts In-Stock

1+ parts

$0.083

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$0.081

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$0.081

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41,639

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$0.081

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Continental Prestige Electronics

USA . 101,485 parts In-Stock

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$0.087

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$0.085

101,485

$0.087

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$0.085

Argo Parts USA

USA . 4,325 parts In-Stock

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$0.087

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$0.084

4,325

$0.087

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$0.084

Netroflash

USA . 2,000 parts In-Stock

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$0.087

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$0.083

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$0.081

2,000

$0.087

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$0.081

Corphita

USA . 376 parts In-Stock

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$0.088

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376

$0.088

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Advanced Electronics

New Zealand . 400 parts In-Stock

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$0.696

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$0.661

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$0.661

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400

$0.696

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$0.661

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Corohmni

South Africa . 19 parts In-Stock

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$1.279

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19

$1.279

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Aztec Data Supply Inc.

USA . 4,391 parts In-Stock

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$1.480

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$1.480

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AZTECH Wire

Italy . 748 parts In-Stock

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$14.260

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748

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QUARKTWIN TECHNOLOGY LTD

USA . 25,680 parts In-Stock

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UNI Independent Distributors

Spain . 6,710 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality BFR93AW,135 NPN transistor from NXP Semiconductors. This versatile component is perfect for a wide range of applications, offering reliable performance and efficiency. With a maximum power dissipation of 0.3W and a nominal transition frequency of 4500MHz, this transistor delivers exceptional functionality. Whether you're designing amplifiers, oscillators, or RF circuits, the BFR93AW,135 provides the value, benefits, and advantages you need to bring your projects to life. Trust in NXP Semiconductors for superior components that exceed expectations.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for various electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making this product easy to use in electronic projects.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle relatively high power levels without overheating or damage.

Minimum DC Current Gain (hFE): 40

The high minimum DC current gain ensures reliable amplification performance, making this product suitable for signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation, ensuring reliable operation in various environments.

Maximum Collector Current (IC): 0.035 A

The high maximum collector current allows for handling relatively high current levels, making this transistor suitable for power amplification applications.

Terminal Finish: TIN

TIN terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in electronic circuits.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature allows for quick and efficient soldering processes, optimizing manufacturing efficiency.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without damage, ensuring robust assembly in production.

Nominal Transition Frequency (fT): 4500 MHz

The high nominal transition frequency indicates fast response time and high-frequency performance, making this transistor ideal for RF and high-speed applications.

Technical Specifications

Other Function Transistors BFR93AW,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

BFR93AW,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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