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BFR92AT/R

Philips Semiconductors

BFR92AT/R by Philips Semiconductors

BFR92AT/R by Philips Semiconductors is a NPN transistor with a max power dissipation of 0.35W and a min DC current gain of 40. It is suitable for applications requiring high frequency performance, with a nominal transition frequency of 3000MHz.

Median Price

$0.523

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Component Electronics Inc.

Canada . 400 parts In-Stock

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$0.380

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Freelance Electronics

USA . 2,196 parts In-Stock

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IBS Electronics

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Electronics Depot

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Bristol Electronics

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Atlantic Semiconductor

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Digiode

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Anansix

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Prism Electronics

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Nova Conductors

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Vyrian

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Speed Components Ltd

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Aztec Data Supply Inc.

USA . 305 parts In-Stock

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Corohmni

South Africa . 297 parts In-Stock

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One Stop Electronics

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AZTECH Wire

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Ampacity Inc.

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Semicontronic

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Perfect Parts

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Continental Prestige Electronics

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Argo Parts USA

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Glotronic Ltd.

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UNI Independent Distributors

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Bastille Electronics

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Overview

Discover the BFR92AT/R by Philips Semiconductors, a high-quality NPN transistor that delivers exceptional performance and reliability. Manufactured by industry leaders, this transistor offers unparalleled benefits in a wide range of applications. With its surface mount capability and single configuration, it provides convenience and versatility. From amplifiers to oscillators, the BFR92AT/R guarantees optimal power dissipation and impressive transition frequency. Experience the value and advantages of this remarkable product and take your designs to new heights.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching due to their high input impedance and fast response times.

Configuration: SINGLE

Single configuration transistors are simpler to use and can be easily integrated into circuits, making them ideal for basic electronic projects.

Surface Mount: YES

Surface mount transistors are compact, lightweight, and suitable for automated assembly processes, making them ideal for small electronic devices.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35W, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates that this transistor can provide significant amplification of input signals, making it suitable for amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 0.025 A

An IC of 0.025A allows this transistor to handle moderate current levels without saturation, making it suitable for low-power switching applications.

Terminal Finish: MATTE TIN

Matte Tin terminal finish provides good solderability and corrosion resistance, ensuring stable connections and long-term reliability.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand the thermal stresses of soldering processes, ensuring proper assembly and functionality.

Nominal Transition Frequency (fT): 3000 MHz

A high nominal transition frequency of 3000MHz indicates that this transistor can operate at high frequencies, making it suitable for RF and high-speed applications.

Technical Specifications

Other Function Transistors BFR92AT/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Nominal Transition Frequency (fT):

Trade Compliance

BFR92AT/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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