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RSS060P05FU6TB

ROHM

RSS060P05FU6TB by ROHM

ROHM's RSS060P05FU6TB is a P-CHANNEL MOSFET with 6A max drain current and 2W power dissipation. Ideal for enhancement mode operation in surface mount applications up to 150°C, making it suitable for various electronic devices requiring high power efficiency.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Chip Stock

USA . 2,721 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$2.157

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$1.963

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$1.769

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Ampacity Inc.

Singapore . 1,375 parts In-Stock

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$12.050

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AZTECH Wire

Italy . 1,213 parts In-Stock

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$17.540

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Unlock a world of possibilities with the ROHM RSS060P05FU6TB P-CHANNEL function transistor. Manufactured by industry leader ROHM, this single configuration transistor offers enhanced performance and reliability for a wide range of applications. Whether you're designing automotive electronics, industrial controls, or consumer appliances, this transistor delivers exceptional quality and efficiency. Trust ROHM to provide the cutting-edge technology you need to bring your projects to life.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low on-resistance and high current carrying capability, making them suitable for power management applications.

Configuration: SINGLE

The single configuration simplifies the design and reduces the complexity of the circuit, making it easier to implement.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB designs, saving space and reducing manufacturing costs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to control and can be used in a wide range of applications, providing flexibility in circuit design.

Maximum Drain Current (Abs) (ID): 6 A

With a high maximum drain current, this transistor can handle heavy loads and is suitable for high-power applications.

Maximum Power Dissipation (Abs): 2 W

The high maximum power dissipation rating ensures that the transistor can operate reliably even under high load conditions without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high speed and efficiency, making this transistor suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand elevated temperatures, increasing the robustness and reliability of the device.

Maximum Time At Peak Reflow Temperature (s): 10

The short peak reflow time minimizes the exposure of the device to high temperatures during manufacturing, reducing the risk of damage.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance enables the transistor to withstand the harsh reflow soldering process, ensuring a strong and reliable solder joint.

Technical Specifications

Other Function Transistors RSS060P05FU6TB attributes and parameters. Explore more Other Function Transistors devices from ROHM

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

RSS060P05FU6TB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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