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BFS520,135

NXP Semiconductors

BFS520,135 by NXP Semiconductors

BFS520,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Perfect for efficient signal amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,987 parts In-Stock

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Digiode

USA . 2,373 parts In-Stock

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Anansix

USA . 182 parts In-Stock

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AZTECH Wire

Italy . 127 parts In-Stock

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$20.810

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One Stop Electronics

USA . 1,404 parts In-Stock

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$34.050

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Component Stockers USA

USA . 493 parts In-Stock

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$99.990

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UNI Independent Distributors

Spain . 8,197 parts In-Stock

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Northwest PG Solutions

USA . 1,657 parts In-Stock

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Native Components

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Microchip USA

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Corphita

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Overview

Unlock the potential of your projects with the BFS520,135 by NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP ensures this NPN transistor delivers reliability and efficiency in various applications, from consumer electronics to industrial systems. With its robust performance at high temperatures and impeccable power dissipation capabilities, the BFS520,135 empowers designers to create cutting-edge solutions while maximizing value and minimizing risks. Elevate your designs today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used and suitable for a variety of switching and amplification applications, making this product versatile and compatible with many circuit designs.

Configuration: SINGLE

The single configuration makes this transistor ideal for simple applications where only one transistor is needed, reducing complexity in circuit design.

Surface Mount: YES

Surface mount technology allows for compact circuit designs, facilitating high-density arrangements on PCBs and improving manufacturing efficiency.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels, suitable for various low-to-medium power applications.

Minimum DC Current Gain (hFE): 60

A minimum current gain (hFE) of 60 ensures efficient amplification, making this transistor a reliable choice for boosting signal strength in electronic circuits.

Maximum Operating Temperature: 150 °C

Operating at up to 150 °C improves reliability in high-temperature environments, ensuring longevity and consistent performance in demanding applications.

Maximum Collector Current (IC): 0.07 A

A collector current rating of 0.07 A indicates suitable capability for general-purpose applications without significant risk of overheating or damage.

Terminal Finish: TIN

Tin terminal finish enhances solderability and ensures a reliable electrical connection, crucial for maintaining performance in assembled products.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow time of 30 seconds allows for compatibility with standard surface mount assembly processes, ensuring efficient production and reliability post-assembly.

Peak Reflow Temperature: 260 °C

A peak reflow temperature of 260 °C ensures proper solder reflow and the integrity of the transistor during assembly, making it robust in thermal cycling applications.

Technical Specifications

Other Function Transistors BFS520,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BFS520,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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