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BFS58

Texas Instruments

BFS58 by Texas Instruments

The Texas Instruments BFS58 is an NPN transistor with a max collector current of 0.05A and a nominal transition frequency of 2400MHz. With a max power dissipation of 0.2W, it is suitable for applications requiring high-frequency amplification in surface-mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,869 parts In-Stock

1+ parts

-

100+ parts

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4,869

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Digiode

USA . 4,807 parts In-Stock

1+ parts

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4,807

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 17 parts In-Stock

1+ parts

$0.144

100+ parts

-

1k+ parts

-

10k+ parts

$0.138

17

$0.144

-

-

$0.138

Northwest PG Solutions

USA . 1,632 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

-

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$0.140

1,632

$0.158

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-

$0.140

Parana Technologies

USA . 364 parts In-Stock

1+ parts

$1.023

100+ parts

-

1k+ parts

$1.894

10k+ parts

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364

$1.023

-

$1.894

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DigiPath Technology Company

USA . 1,975 parts In-Stock

1+ parts

$1.126

100+ parts

$1.036

1k+ parts

-

10k+ parts

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1,975

$1.126

$1.036

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ChromeModa Solutions

Germany . 3,175 parts In-Stock

1+ parts

$1.149

100+ parts

$0.942

1k+ parts

-

10k+ parts

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3,175

$1.149

$0.942

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IDEA Electronic Components Group

UK . 319 parts In-Stock

1+ parts

$1.149

100+ parts

-

1k+ parts

$1.034

10k+ parts

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319

$1.149

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$1.034

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Semicontronic

India . 284 parts In-Stock

1+ parts

$8.050

100+ parts

$7.849

1k+ parts

$7.808

10k+ parts

-

284

$8.050

$7.849

$7.808

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AZTECH Wire

Italy . 663 parts In-Stock

1+ parts

$11.157

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663

$11.157

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One Stop Electronics

USA . 1,043 parts In-Stock

1+ parts

$14.050

100+ parts

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1,043

$14.050

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Ampacity Inc.

Singapore . 481 parts In-Stock

1+ parts

$41.050

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481

$41.050

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Corphita

USA . 925 parts In-Stock

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925

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Corohmni

South Africa . 131 parts In-Stock

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131

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Overview

Upgrade your electronics with the high-quality BFS58 NPN transistor by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers reliable components that are essential for modern electronic devices. The BFS58 is perfect for a wide range of applications, providing superior performance and efficiency. Experience the value and benefits of this versatile transistor, offering customers enhanced functionality and durability in their projects. Trust Texas Instruments for all your transistor needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into existing systems.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and reducing manufacturing costs.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

Operating at up to 150°C ensures reliability in high-temperature environments.

Maximum Collector Current (IC): 0.05 A

The maximum collector current of 0.05 A allows for ample current handling capacity in various applications.

Nominal Transition Frequency (fT): 2400 MHz

The high nominal transition frequency of 2400 MHz indicates excellent high-frequency performance, suitable for RF applications.

Technical Specifications

Other Function Transistors BFS58 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

BFS58 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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