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PBSS4520X,146

NXP Semiconductors

PBSS4520X,146 by NXP Semiconductors

PBSS4520X,146 from NXP Semiconductors is a single NPN transistor ideal for high-performance applications. It features a max power dissipation of 2.5W, a collector current of 5A, and operates up to 150 °C. This surface-mount device excels in RF amplification and switching tasks.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 173,000 parts In-Stock

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Vyrian

USA . 8,451 parts In-Stock

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Anansix

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Digiode

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AZTECH Wire

Italy . 871 parts In-Stock

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$16.000

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Ampacity Inc.

Singapore . 608 parts In-Stock

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$58.050

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One Stop Electronics

USA . 676 parts In-Stock

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Component Stockers USA

USA . 436 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 26,735 parts In-Stock

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Corphita

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UNI Independent Distributors

Spain . 2,388 parts In-Stock

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Microchip USA

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Overview

Elevate your designs with the PBSS4520X,146 from NXP Semiconductors, a trusted leader in innovative solutions. This high-performance NPN transistor excels in reliability and efficiency, making it ideal for applications ranging from audio amplification to signal processing. With its robust power handling and exceptional gain, you'll benefit from enhanced performance and sustainability. Choose NXP for superior quality and unmatched value in every project!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in various applications for their excellent switching and amplification capabilities, making this product suitable for many designs.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easy to implement in various applications.

Surface Mount: YES

Surface mount technology (SMT) allows for compact designs, making it ideal for modern electronic devices where space is a constraint.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5 W, this transistor can handle substantial power levels, ensuring reliable performance in demanding applications.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain (hFE) of 200 indicates strong amplification capabilities, making the product effective in enhancing weak signals.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures (up to 150 °C) ensures reliability in high-temperature environments, broadening its application range.

Maximum Collector Current (IC): 5 A

This transistor can handle a maximum collector current of 5 A, making it suitable for high-current applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring stable and durable connections.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum time of 30 seconds at peak reflow temperature ensures that the component can withstand soldering processes without damage.

Peak Reflow Temperature: 260 °C

The capability to tolerate peak reflow temperatures of 260 °C makes this product compatible with modern PCB assembly processes.

Nominal Transition Frequency (fT): 100 MHz

A nominal transition frequency of 100 MHz indicates that this transistor is suitable for high-frequency applications, ideal for RF and communication systems.

Technical Specifications

Other Function Transistors PBSS4520X,146 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

PBSS4520X,146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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