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PBSS4230QAZ

NXP Semiconductors

PBSS4230QAZ by NXP Semiconductors

PBSS4230QAZ by NXP Semiconductors is an NPN transistor with a max power dissipation of 1W, operating temperature up to 150°C, and collector current of 2A. It is used in applications requiring high DC current gain (hFE >100), such as surface-mount configurations for various electronic functions.

Median Price

$0.188

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 410,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.083

410,000

-

-

-

$0.083

DigiKey

USA . 329,769 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.240

329,769

-

-

-

$0.240

Rochester

USA . 327,269 parts In-Stock

1+ parts

-

100+ parts

$0.196

1k+ parts

$0.162

10k+ parts

$0.145

327,269

-

$0.196

$0.162

$0.145

Verical

USA . 123,819 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.181

123,819

-

-

-

$0.181

Element14

Singapore . 17,425 parts In-Stock

1+ parts

-

100+ parts

$18.960

1k+ parts

$13.460

10k+ parts

$8.710

17,425

-

$18.960

$13.460

$8.710

Future Electronics

Canada . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.064

5,000

-

-

-

$0.064

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 682 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

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682

$0.070

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.126

100+ parts

-

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300

$0.126

-

-

-

DigiKey Marketplace

USA . 335,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.080

10k+ parts

-

335,000

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-

$0.080

-

Chip Stock

USA . 118,000 parts In-Stock

1+ parts

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118,000

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NAC Semi

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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$0.104

10,000

-

-

-

$0.104

Vyrian

USA . 2,249 parts In-Stock

1+ parts

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2,249

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Anansix

USA . 748 parts In-Stock

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748

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 140,597 parts In-Stock

1+ parts

$0.053

100+ parts

-

1k+ parts

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10k+ parts

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140,597

$0.053

-

-

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Corphita

USA . 3,804 parts In-Stock

1+ parts

$0.067

100+ parts

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10k+ parts

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3,804

$0.067

-

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AZTECH Wire

Italy . 11,904 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

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10k+ parts

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11,904

$0.090

-

-

-

Argo Parts USA

USA . 174 parts In-Stock

1+ parts

$0.126

100+ parts

-

1k+ parts

-

10k+ parts

$0.123

174

$0.126

-

-

$0.123

Kepictronics

USA . 450,000 parts In-Stock

1+ parts

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100+ parts

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450,000

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Continental Prestige Electronics

USA . 115,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.084

10k+ parts

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115,500

-

-

$0.084

-

Perfect Parts

USA . 11,200 parts In-Stock

1+ parts

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100+ parts

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11,200

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UNI Independent Distributors

Spain . 4,024 parts In-Stock

1+ parts

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100+ parts

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4,024

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Supply Digital

USA . 543 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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543

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Overview

Discover the PBSS4230QAZ by NXP Semiconductors, a high-quality NPN transistor with a single configuration that offers exceptional performance in a variety of applications. With a maximum power dissipation of 1W and a minimum DC current gain of 100, this transistor is designed to deliver reliable results in demanding conditions. Whether you're working on automotive electronics, industrial controls, or consumer electronics, the PBSS4230QAZ provides the efficiency and durability you need. Trust NXP Semiconductors to deliver top-notch components for your next project.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying circuits, making this product suitable for amplification applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the product easy to integrate into a circuit.

Surface Mount: YES

Surface mount capability allows for efficient PCB assembly and space-saving design.

Maximum Power Dissipation (Abs): 1 W

With a high maximum power dissipation, this product can handle moderately high power levels without overheating.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures stable and reliable amplification in circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance of 150°C allows the product to operate in a wide range of environments.

Maximum Collector Current (IC): 2 A

A high maximum collector current rating of 2 A enables the product to handle significant current loads in circuit applications.

Nominal Transition Frequency (fT): 130 MHz

The high nominal transition frequency makes this product suitable for high-frequency applications such as RF amplification.

Technical Specifications

Other Function Transistors PBSS4230QAZ attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

PBSS4230QAZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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