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PBSS4350Z/DG,135

NXP Semiconductors

PBSS4350Z/DG,135 by NXP Semiconductors

NXP Semiconductors' PBSS4350Z/DG,135 is an NPN transistor with a max power dissipation of 2W and max collector current of 3A. With a min DC current gain of 100, it operates up to 150°C making it ideal for high-power applications in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 3,448 parts In-Stock

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Vyrian

USA . 686 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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Anansix

USA . 160 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,774 parts In-Stock

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$0.336

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Corohmni

South Africa . 1,019 parts In-Stock

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$0.787

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Ampacity Inc.

Singapore . 1,494 parts In-Stock

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$4.050

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AZTECH Wire

Italy . 734 parts In-Stock

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734

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One Stop Electronics

USA . 674 parts In-Stock

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$25.050

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Argo Parts USA

USA . 4,824 parts In-Stock

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Continental Prestige Electronics

USA . 3,822 parts In-Stock

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UNI Independent Distributors

Spain . 2,608 parts In-Stock

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Corphita

USA . 1,835 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Upgrade your electronics with the PBSS4350Z/DG,135 by NXP Semiconductors. Known for their top-quality semiconductor products, NXP delivers reliability and performance that exceeds expectations. This NPN transistor boasts a maximum power dissipation of 2W and a minimum DC current gain of 100, making it ideal for a wide range of applications. From amplifiers to signal processing circuits, this surface-mount transistor offers unmatched value and efficiency, ensuring that your projects run smoothly and efficiently. Experience the difference with NXP Semiconductors.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and suitable for a wide range of uses.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuits and provide a simpler overall design, making this product user-friendly.

Surface Mount: YES

Surface mount technology allows for smaller and more compact circuit designs, making this product suitable for applications with limited space.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain of 100 ensures stable and consistent performance in amplification circuits, making this product ideal for such applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for use in various environments and applications.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3A allows for handling higher current levels, making this transistor suitable for applications requiring higher power output.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor is suitable for high-frequency applications such as radio frequency amplification or signal processing.

Technical Specifications

Other Function Transistors PBSS4350Z/DG,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

PBSS4350Z/DG,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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