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BF512,235

NXP Semiconductors

BF512,235 by NXP Semiconductors

BF512,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 4,717 parts In-Stock

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Digiode

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Anansix

USA . 388 parts In-Stock

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Corohmni

South Africa . 255 parts In-Stock

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Advanced Electronics

New Zealand . 45 parts In-Stock

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$1.697

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$1.544

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$1.392

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AZTECH Wire

Italy . 508 parts In-Stock

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Native Components

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Northwest PG Solutions

USA . 294 parts In-Stock

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$28.184

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One Stop Electronics

USA . 1,641 parts In-Stock

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UNI Independent Distributors

Spain . 5,586 parts In-Stock

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Corphita

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Perfect Parts

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Microchip USA

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Overview

Unlock superior performance with the BF512,235 from NXP Semiconductors—a trusted leader in innovative technology. This N-channel surface mount transistor not only ensures robust power management but also excels in thermal efficiency, making it ideal for diverse applications. Enjoy the benefits of enhanced reliability and streamlined design, empowering your projects to reach new heights while enjoying peace of mind with NXP’s commitment to quality and excellence.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high electron mobility, making them efficient and fast, which is beneficial for high-speed switching applications.

Surface Mount: YES

Being surface mount allows for efficient use of board space and enables easier automated assembly processes, contributing to lower manufacturing costs.

Maximum Power Dissipation (Abs): 0.25 W

With a power dissipation of 0.25 W, this transistor can handle moderate power levels, making it suitable for low-power applications.

Field Effect Transistor Technology: JUNCTION

Junction FETs generally have lower noise and improved thermal stability, enhancing overall circuit performance in sensitive applications.

Maximum Operating Temperature: 150 °C

A high operating temperature of 150 °C allows this transistor to function reliably in demanding environments, extending its application range.

Terminal Finish: TIN

TIN finish provides good solderability and corrosion resistance, ensuring durable connections and improving the longevity of the component.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum of 30 seconds at peak reflow temperature indicates compatibility with modern soldering processes and reduces the risk of damage during assembly.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C ensures compatibility with a wide range of soldering processes, making it versatile for manufacturing.

Technical Specifications

Other Function Transistors BF512,235 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Field Effect Transistor Technology:

JUNCTION

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BF512,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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