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BF556A,235

NXP Semiconductors

BF556A,235 by NXP Semiconductors

BF556A,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,907 parts In-Stock

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Vyrian

USA . 2,611 parts In-Stock

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Anansix

USA . 209 parts In-Stock

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209

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One Stop Electronics

USA . 541 parts In-Stock

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$0.050

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541

$0.050

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Northwest PG Solutions

USA . 627 parts In-Stock

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$3.201

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627

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AZTECH Wire

Italy . 1,189 parts In-Stock

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$22.140

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UNI Independent Distributors

Spain . 4,939 parts In-Stock

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Corphita

USA . 1,632 parts In-Stock

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Microchip USA

USA . 353 parts In-Stock

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Native Components

USA . 244 parts In-Stock

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$2.823

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Overview

Unlock the potential of your designs with the BF556A,235 from NXP Semiconductors! This high-quality N-channel transistor is engineered for superior performance and reliability, making it ideal for a wide range of applications, from consumer electronics to industrial automation. With NXP’s commitment to innovation and excellence, you can trust that this product will deliver outstanding efficiency and longevity, enhancing your projects and ensuring peace of mind.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer better performance and are more efficient in handling high currents, making them ideal for high-speed switching applications.

Surface Mount: YES

Surface mount technology allows for compact design and high-density circuit layouts, enabling the creation of smaller and more efficient electronic devices.

Maximum Power Dissipation (Abs): 0.25 W

With a power dissipation rating of 0.25W, this transistor can effectively manage heat, ensuring reliable performance in low to moderate power applications.

Field Effect Transistor Technology: JUNCTION

Junction Field Effect Transistors (JFETs) are known for their low noise and high input impedance, making them excellent choices for sensitive signal applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can function reliably in high-temperature environments, which is crucial for robust applications.

Terminal Finish: TIN

The tin terminal finish offers excellent solderability and corrosion resistance, ensuring strong and durable connections in your circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum time of 30 seconds at peak reflow temperature ensures that the transistor can endure the assembly process without degradation, maintaining its performance and reliability.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C provides compatibility with modern soldering techniques, enabling efficient assembly in high-performance electronics.

Technical Specifications

Other Function Transistors BF556A,235 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Field Effect Transistor Technology:

JUNCTION

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BF556A,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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