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Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.

Other Function Transistors

Available Parts 223

Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
2SC3074-O(Q) by Toshiba

2SC3074-O(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;

5 A

SINGLE

70

1

150 Cel

NPN

20 W

Other Transistors

YES

2SC3074-Y(Q) by Toshiba

2SC3074-Y(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 120;

5 A

SINGLE

120

1

150 Cel

NPN

20 W

Other Transistors

YES

CJD47TR13PBFREE by Central Semiconductor

CJD47TR13PBFREE

Central Semiconductor

CJD47TR13PBFREE by Central Semiconductor is an NPN transistor with a max power dissipation of 15W and a min DC current gain of 30. It is surface mountable and can handle a max collector current of 1A. This transistor is commonly used in various electronic applications.

1 A

SINGLE

30

1

150 Cel

NPN

15 W

Other Transistors

YES

10 MHz

BF357 by Texas Instruments

BF357

Texas Instruments

Texas Instruments' BF357 NPN transistor has a max power dissipation of 0.2W, operating temp of 150°C, and collector current of 0.05A. Ideal for applications requiring a single configuration such as amplifiers or signal processing circuits due to its nominal transition frequency of 1.6MHz.

.05 A

SINGLE

1

150 Cel

NPN

.2 W

Other Transistors

NO

1.6 MHz

BFW20 by Texas Instruments

BFW20

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Operating Temperature: 175 Cel;

SINGLE

1

175 Cel

PNP

.36 W

Other Transistors

NO

40 MHz

BC857BTE6327 by Infineon Technologies

BC857BTE6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BSS83PE6327 by Infineon Technologies

BSS83PE6327

Infineon Technologies

BSS83PE6327 by Infineon is a P-CHANNEL transistor with a max drain current of 0.33A and power dissipation of 0.36W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C. This surface-mount transistor utilizes metal-oxide semiconductor technology, making it ideal for various electronic circuits.

SINGLE

.33 A

.33 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.36 W

Other Transistors

YES

BC847BTE6327 by Infineon Technologies

BC847BTE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

200

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

BFS460L6E6327 by Infineon Technologies

BFS460L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Moisture Sensitivity Level (MSL): 1;

.05 A

90

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

16000 MHz

BFS469L6E6327 by Infineon Technologies

BFS469L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Maximum Operating Temperature: 150 Cel;

.07 A

100

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

16000 MHz

BFP540FE6327 by Infineon Technologies

BFP540FE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

21000 MHz

BFS466L6E6327 by Infineon Technologies

BFS466L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A; Peak Reflow Temperature (C): 260;

.035 A

90

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

11000 MHz

FDV304P_NB8U003 by Fairchild Semiconductor

FDV304P_NB8U003

Fairchild Semiconductor

FDV304P_NB8U003 by Fairchild Semiconductor is a P-CHANNEL transistor with a max drain current of 0.46A and power dissipation of 0.35W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C, making it ideal for various electronic circuits.

SINGLE

.46 A

.46 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.35 W

Other Transistors

YES

BC635-16,126 by NXP Semiconductors

BC635-16,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

BC875,126 by NXP Semiconductors

BC875,126

NXP Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

DARLINGTON

2000

150 Cel

NPN

.6 W

Other Transistors

NO

200 MHz

PBSS4160K,115 by NXP Semiconductors

PBSS4160K,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

NPN

.425 W

Other Transistors

YES

150 MHz

PBSS4350S,126 by NXP Semiconductors

PBSS4350S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 3 A;

3 A

SINGLE

100

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS5160K,115 by NXP Semiconductors

PBSS5160K,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

PNP

.425 W

Other Transistors

YES

150 MHz

PBSS8110AS,126 by NXP Semiconductors

PBSS8110AS,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

80

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS8110S,126 by NXP Semiconductors

PBSS8110S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

80

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS9110AS,126 by NXP Semiconductors

PBSS9110AS,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

125

1

150 Cel

PNP

.83 W

Other Transistors

NO

100 MHz

PBSS9110S,126 by NXP Semiconductors

PBSS9110S,126

NXP Semiconductors

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

125

150 Cel

PNP

.83 W

Other Transistors

NO

100 MHz

PH2369,126 by NXP Semiconductors

PH2369,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

SINGLE

40

1

150 Cel

NPN

.5 W

Other Transistors

NO

500 MHz

PMEM4030NS,115 by NXP Semiconductors

PMEM4030NS,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

NPN

1 W

Other Transistors

YES

100 MHz

PMEM4030PS,115 by NXP Semiconductors

PMEM4030PS,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

PNP

1 W

Other Transistors

YES

100 MHz

PN2369A,126 by NXP Semiconductors

PN2369A,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

SINGLE

40

1

150 Cel

NPN

.5 W

Other Transistors

NO

500 MHz

FDC640P_F095 by Fairchild Semiconductor

FDC640P_F095

Fairchild Semiconductor

FDC640P_F095 by Fairchild Semiconductor is a P-CHANNEL transistor with 4.5A max drain current and 1.6W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high power handling capabilities.

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES

BUD42D-001 by Onsemi

BUD42D-001

Onsemi

BUD42D-001 by Onsemi is an NPN transistor with a max power dissipation of 25W and max collector current of 4A. With a min hFE of 8, it operates up to 150 °C making it ideal for high-power applications in various electronic circuits.

4 A

SINGLE

8

e0

1

1

150 Cel

235

NPN

25 W

Other Transistors

NO

TIN LEAD

BC337-025 by Onsemi

BC337-025

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Terminal Finish: TIN LEAD;

.8 A

SINGLE

160

e0

1

150 Cel

235

NPN

1.5 W

Other Transistors

NO

TIN LEAD

BC337-040 by Onsemi

BC337-040

Onsemi

BC337-040 by Onsemi is an NPN transistor with a max power dissipation of 1.5W and min DC current gain of 250. It operates at up to 150 °C, handles a max collector current of 0.8A, and has TIN LEAD terminal finish. Ideal for various electronic applications requiring reliable switching and amplification in compact designs.

.8 A

SINGLE

250

e0

1

150 Cel

235

NPN

1.5 W

Other Transistors

NO

TIN LEAD

BFR360TE6327 by Infineon Technologies

BFR360TE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

60

1

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

10000 MHz