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BC337-040

Onsemi

BC337-040 by Onsemi

BC337-040 by Onsemi is an NPN transistor with a max power dissipation of 1.5W and min DC current gain of 250. It operates at up to 150 °C, handles a max collector current of 0.8A, and has TIN LEAD terminal finish. Ideal for various electronic applications requiring reliable switching and amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 64,000 parts In-Stock

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Vyrian

USA . 8,032 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,200 parts In-Stock

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ComSIT USA

USA . 4,200 parts In-Stock

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Digiode

USA . 2,320 parts In-Stock

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Native Components

USA . 36 parts In-Stock

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$0.053

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AZTECH Wire

Italy . 1,159 parts In-Stock

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$17.090

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QUARKTWIN TECHNOLOGY LTD

USA . 14,773 parts In-Stock

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TANS Electronics

Latvia . 7,845 parts In-Stock

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SupplyDigital Components

Austria . 5,959 parts In-Stock

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Problanco Electronics

Mexico . 4,590 parts In-Stock

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Kulean Microsystems

USA . 2,585 parts In-Stock

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Northwest PG Solutions

USA . 1,043 parts In-Stock

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UHIMA Technologies

Türkiye . 806 parts In-Stock

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Corphita

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Corohmni

South Africa . 144 parts In-Stock

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Overview

Discover the BC337-040 by Onsemi, a high-quality NPN transistor that offers superior performance in various applications. With a minimum DC current gain of 250 and a maximum power dissipation of 1.5W, this single-configured transistor ensures reliability and efficiency. From amplifiers to switch circuits, this versatile component from a reputable manufacturer like Onsemi guarantees top-notch results. Upgrade your projects with the BC337-040 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits and switching circuits, making this product versatile in various electronic applications.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple circuit designs, making this product user-friendly for beginners or casual hobbyists.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation rating, this transistor can handle higher power loads without overheating, ensuring reliability in demanding applications.

Minimum DC Current Gain (hFE): 250

The high minimum DC current gain ensures efficient amplification of signals, making this transistor ideal for use in signal processing circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to be used in a wide range of environments without performance degradation, increasing its overall durability.

Maximum Collector Current (IC): 0.8 A

With a high collector current rating, this transistor can handle larger current flows, making it suitable for applications requiring higher power output.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring secure connections and reliable performance in circuit assemblies.

Peak Reflow Temperature °C: 235

The high peak reflow temperature makes this transistor suitable for surface mount assembly processes, allowing for efficient and reliable production in automated manufacturing settings.

Technical Specifications

Other Function Transistors BC337-040 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trade Compliance

BC337-040 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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