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Onsemi Other Function Transistors 21

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
EC3A03B-TL-H by Onsemi

EC3A03B-TL-H

Onsemi

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;

JUNCTION

1

150 Cel

N-CHANNEL

.1 W

Other Transistors

YES

EC3A04B-3-TL-H by Onsemi

EC3A04B-3-TL-H

Onsemi

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;

JUNCTION

1

150 Cel

N-CHANNEL

.1 W

Other Transistors

YES

2SA1827S-AY by Onsemi

2SA1827S-AY

Onsemi

Onsemi's 2SA1827S-AY is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

4 A

SINGLE

140

1

150 Cel

PNP

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731S-AY by Onsemi

2SC4731S-AY

Onsemi

2SC4731S-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 140, and IC of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

4 A

SINGLE

140

1

150 Cel

NPN

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731T-AY by Onsemi

2SC4731T-AY

Onsemi

2SC4731T-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 200, and max collector current of 4A. Ideal for applications requiring high DC gain and moderate power handling in temperatures up to 150 °C.

4 A

SINGLE

200

1

150 Cel

NPN

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

EC3H02BA-TL-H by Onsemi

EC3H02BA-TL-H

Onsemi

EC3H02BA-TL-H by Onsemi is an NPN transistor with a single configuration, suitable for surface mount applications. It features a min DC current gain of 120 (hFE), max collector current of 0.07A (IC), and nominal transition frequency of 5000MHz (fT). Ideal for high-frequency circuit designs requiring low power dissipation up to 0.1W at temperatures up to 150 °C.

.07 A

SINGLE

120

1

1

150 Cel

NPN

.1 W

Other Transistors

YES

5000 MHz

FW907-TL-E by Onsemi

FW907-TL-E

Onsemi

FW907-TL-E by Onsemi is a N/P-channel MOSFET with 10A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150 °C. Ideal for various electronic circuits requiring high current switching capabilities.

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

e6

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL AND P-CHANNEL

2.5 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

MCH6331-TL-E by Onsemi

MCH6331-TL-E

Onsemi

The Onsemi MCH6331-TL-E is a P-CHANNEL FET with 3.5A ID and 1.5W power dissipation in ENHANCEMENT MODE. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic circuits requiring high drain current capabilities.

SINGLE

3.5 A

3.5 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.5 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

NTZD3158PT1G by Onsemi

NTZD3158PT1G

Onsemi

NTZD3158PT1G by Onsemi is a P-CHANNEL FET with 0.43A max drain current and 0.28W max power dissipation. It operates in enhancement mode, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount designs needing efficient power management.

.43 A

.43 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.28 W

Other Transistors

YES

MATTE TIN

30

NTLUS3A40PZCTAG by Onsemi

NTLUS3A40PZCTAG

Onsemi

NTLUS3A40PZCTAG by Onsemi is a P-CHANNEL transistor with 6.4A max drain current and 3.8W max power dissipation in enhancement mode. Ideal for applications requiring high-power handling, such as automotive electronics or industrial control systems due to its 150 °C max operating temperature and surface mount configuration.

SINGLE

6.4 A

6.4 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

3.8 W

Other Transistors

YES

TIN

30

NTLUS3A39PZCTBG by Onsemi

NTLUS3A39PZCTBG

Onsemi

NTLUS3A39PZCTBG by Onsemi is a P-CHANNEL transistor with 5.2A max drain current and 2.3W max power dissipation in enhancement mode. Ideal for applications requiring high temperature resistance up to 150 °C, such as power management systems or industrial control circuits.

SINGLE

5.2 A

5.2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

2.3 W

Other Transistors

YES

TIN

30

NJW44H11G by Onsemi

NJW44H11G

Onsemi

NJW44H11G by Onsemi is an NPN transistor with a max power dissipation of 120W and a min DC current gain of 80. It can handle a max collector current of 10A and operates at temperatures up to 150 °C. Ideal for applications requiring high-power amplification in electronic circuits.

10 A

SINGLE

80

e3

1

150 Cel

NPN

120 W

Other Transistors

NO

Matte Tin (Sn) - annealed

FW705-TL-E by Onsemi

FW705-TL-E

Onsemi

FW705-TL-E by Onsemi is a P-CHANNEL FET with 6A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount designs in various electronic systems.

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

e6

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

2.5 W

Other Transistors

YES

TIN BISMUTH

2SJ665-DL-E by Onsemi

2SJ665-DL-E

Onsemi

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

SINGLE

27 A

27 A

METAL-OXIDE SEMICONDUCTOR

e6

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

65 W

Other Transistors

YES

TIN BISMUTH

2SC2812-5-TB-E by Onsemi

2SC2812-5-TB-E

Onsemi

The Onsemi 2SC2812-5-TB-E is an NPN transistor with a min DC current gain of 135. It has a max collector current of 0.15A and can operate at temperatures up to 150 °C. This surface-mount transistor is ideal for applications requiring low power dissipation in single configurations.

.15 A

SINGLE

135

e6

1

1

150 Cel

NPN

.2 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

2SA1855S-AY by Onsemi

2SA1855S-AY

Onsemi

2SA1855S-AY by Onsemi is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150°C.

4 A

SINGLE

140

1

150 Cel

PNP

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4837S-AY by Onsemi

2SC4837S-AY

Onsemi

2SC4837S-AY by Onsemi is an NPN transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.

4 A

SINGLE

140

1

150 Cel

NPN

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

5HP01C-TB-H by Onsemi

5HP01C-TB-H

Onsemi

5HP01C-TB-H by Onsemi is a P-CHANNEL transistor with 0.07A max drain current and 0.25W power dissipation. Ideal for applications requiring single configuration, such as enhancement mode operation in surface mount setups.

SINGLE

.07 A

.07 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.25 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

BUD42D-001 by Onsemi

BUD42D-001

Onsemi

BUD42D-001 by Onsemi is an NPN transistor with a max power dissipation of 25W and max collector current of 4A. With a min hFE of 8, it operates up to 150 °C making it ideal for high-power applications in various electronic circuits.

4 A

SINGLE

8

e0

1

1

150 Cel

235

NPN

25 W

Other Transistors

NO

TIN LEAD

BC337-025 by Onsemi

BC337-025

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Terminal Finish: TIN LEAD;

.8 A

SINGLE

160

e0

1

150 Cel

235

NPN

1.5 W

Other Transistors

NO

TIN LEAD

BC337-040 by Onsemi

BC337-040

Onsemi

BC337-040 by Onsemi is an NPN transistor with a max power dissipation of 1.5W and min DC current gain of 250. It operates at up to 150 °C, handles a max collector current of 0.8A, and has TIN LEAD terminal finish. Ideal for various electronic applications requiring reliable switching and amplification in compact designs.

.8 A

SINGLE

250

e0

1

150 Cel

235

NPN

1.5 W

Other Transistors

NO

TIN LEAD