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2SA1855S-AY

Onsemi

2SA1855S-AY by Onsemi

2SA1855S-AY by Onsemi is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150°C.

Median Price

$0.699

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.674

1k+ parts

$0.559

10k+ parts

$0.498

1,000

-

$0.674

$0.559

$0.498

DigiKey

USA . 1,000 parts In-Stock

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$0.840

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1,000

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$0.840

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Verical

USA . 1,000 parts In-Stock

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-

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$0.699

10k+ parts

$0.623

1,000

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-

$0.699

$0.623

Distributors (In-Stock)

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Digiode

USA . 614 parts In-Stock

1+ parts

$0.524

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614

$0.524

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Vyrian

USA . 10,698 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 95 parts In-Stock

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Corphita

USA . 2,229 parts In-Stock

1+ parts

$0.497

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2,229

$0.497

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Corohmni

South Africa . 203 parts In-Stock

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$0.552

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203

$0.552

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Native Components

USA . 454 parts In-Stock

1+ parts

$0.929

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454

$0.929

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Northwest PG Solutions

USA . 219 parts In-Stock

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$1.022

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219

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Microchip USA

USA . 5,116 parts In-Stock

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$3.445

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$3.445

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QUARKTWIN TECHNOLOGY LTD

USA . 19,530 parts In-Stock

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TANS Electronics

Latvia . 8,059 parts In-Stock

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Problanco Electronics

Mexico . 5,926 parts In-Stock

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Kulean Microsystems

USA . 3,944 parts In-Stock

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SupplyDigital Components

Austria . 3,546 parts In-Stock

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Continental Prestige Electronics

USA . 990 parts In-Stock

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$0.499

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990

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$0.499

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Perfect Parts

USA . 213 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 95 parts In-Stock

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95

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UHIMA Technologies

Türkiye . 76 parts In-Stock

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76

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Overview

Unleash the power of innovation with the 2SA1855S-AY by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. The 2SA1855S-AY is a versatile PNP transistor perfect for a wide range of applications. From amplifiers to voltage regulators, this transistor offers exceptional performance and efficiency. Trust Onsemi to provide you with cutting-edge technology that exceeds your expectations. Upgrade your projects today with the 2SA1855S-AY and experience the difference!

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors allow for current to flow from emitter to collector, making them suitable for use in high-power applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to integrate into electronic circuits.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle significant power loads without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 140

A minimum DC current gain of 140 indicates a strong amplification capability, making this transistor suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for operation in a wide range of environments without the risk of overheating.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish ensures good conductivity and corrosion resistance, enhancing the durability and longevity of the transistor.

Technical Specifications

Other Function Transistors 2SA1855S-AY attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Configuration:

Minimum DC Current Gain (hFE):

140

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Trade Compliance

2SA1855S-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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