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2SA1312-BL(TE85L,F)

Toshiba

2SA1312-BL(TE85L,F) by Toshiba

Toshiba's 2SA1312-BL(TE85L,F) is a PNP transistor with max power dissipation of 0.15W, min DC current gain of 350, and max collector current of 0.1A. Ideal for applications requiring single configuration surface mount transistors in temperatures up to 125°C.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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RS (Exports)

UK . 5,350 parts In-Stock

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$0.119

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$0.095

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Chip1Stop

Japan . 1,750 parts In-Stock

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$0.142

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$0.079

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Vyrian

USA . 3,095 parts In-Stock

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VNN

France . 2,853 parts In-Stock

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TME

Poland . 1,715 parts In-Stock

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$0.118

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$0.106

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$0.099

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Nova Conductors

Japan . 38 parts In-Stock

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Ampacity Inc.

Singapore . 5,745 parts In-Stock

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$0.296

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AZTECH Wire

Italy . 712 parts In-Stock

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$12.920

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Component Stockers USA

USA . 485 parts In-Stock

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$99.990

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Perfect Parts

USA . 197,058 parts In-Stock

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Kepictronics

USA . 96,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Argo Parts USA

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Overview

Experience superior performance and reliability with the Toshiba 2SA1312-BL(TE85L,F). As a leading manufacturer, Toshiba delivers unmatched quality in the category of Other Function Transistors. This PNP transistor offers a single configuration, surface mount capability, and a maximum collector current of 0.1A, making it ideal for a wide range of applications. Trust in Toshiba's reputation for excellence and choose the 2SA1312-BL(TE85L,F) for exceptional value and benefits that will exceed your expectations.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, making this product versatile for a variety of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into a circuit board.

Surface Mount: YES

Surface mount capability allows for easy and compact installation on circuit boards, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can handle moderate power levels without overheating or failing prematurely.

Minimum DC Current Gain (hFE): 350

High DC current gain of 350 ensures efficient amplification and signal processing within the circuit.

Maximum Operating Temperature: 125 °C

Can operate reliably at temperatures up to 125°C, making it suitable for a wide range of environmental conditions.

Maximum Collector Current (IC): 0.1 A

Can handle a maximum collector current of 0.1 A, allowing for safe and reliable operation in various applications.

Technical Specifications

Other Function Transistors 2SA1312-BL(TE85L,F) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

350

No. of Elements:

1

Maximum Operating Temperature:

125 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SA1312-BL(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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