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2SA1208

Onsemi

2SA1208 by Onsemi

The Onsemi 2SA1208 is a PNP transistor with max power dissipation of 0.9W, min DC current gain of 100, and max collector current of 0.07A. Ideal for low-power applications in electronics due to its single configuration and operating temp up to 150 °C.

Median Price

$4.000

Lifecycle Status

Suppliers In-Stock

9

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1k+

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Ace Electronics

USA . 643 parts In-Stock

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Electronic Expediters

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Digiode

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Vyrian

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Tech-Mark Corp

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LittleDiode

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R&J Components

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Fibra_Brandt Electronic GMBH

Germany . 11 parts In-Stock

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ECAB

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Corohmni

South Africa . 117 parts In-Stock

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Native Components

USA . 564 parts In-Stock

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$286.925

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$281.186

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$278.317

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$275.448

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Northwest PG Solutions

USA . 105 parts In-Stock

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Problanco Electronics

Mexico . 8,342 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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SupplyDigital Components

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GreenTree Electronics

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UHIMA Technologies

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RTC Component Inc.

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Overview

Unleash the power of innovation with the 2SA1208 by Onsemi. As a leading manufacturer in the industry, Onsemi's commitment to quality and reliability shines through in this PNP transistor. Ideal for a range of applications, this single configuration transistor offers customers unmatched performance and efficiency. Experience the difference with the 2SA1208 and unlock a world of possibilities for your projects. Elevate your designs with Onsemi today!

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-speed switching applications, making this product suitable for applications that require fast response times.

Configuration: SINGLE

The single configuration makes it easier to implement and troubleshoot in circuits compared to more complex configurations, making this product user-friendly.

Maximum Power Dissipation (Abs): 0.9 W

With a high maximum power dissipation, this product can handle more power without overheating, ensuring reliable operation in high-power applications.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain means the transistor can amplify small input signals effectively, making this product suitable for amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this product to withstand high temperatures, making it suitable for use in environments with elevated temperatures.

Maximum Collector Current (IC): 0.07 A

This product can handle a maximum collector current of 0.07 A, making it suitable for low to medium current applications where precise current control is required.

Technical Specifications

Other Function Transistors 2SA1208 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SA1208 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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